DOI: 10.1063/1.1866230. Extremely-high-density carrier injection and transport over 12000A∕cm2 into organic thin films

Extremely-high-density carrier injection and transport over 12000A∕cm2 into organic thin films

10.1063/1.1866230

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We achieved extremely-high-density steady state carrier injection and transport at over ∼10000A∕cm2 into organic thin films using high thermally conductive substrates, which suppress the temperature rise inside the devices by transferring the joule heat into the substrates. Using a silicon substrate with a high thermal conductivity of 148W∕mK and a small size cathode with a radius of r=25μm, we achieved a maximum current density of Jmax=12222A∕cm2 and power density of Pmax∼105W∕cm2 in an ITO(110nm)∕copperphthalocyanine (CuPc) (25nm)∕MgAg(100nm)∕Ag(10nm) device during a fraction of a second under direct current sweep. Further, we also achieved Jmax=514A∕cm2 in a conventional organic light-emitting diode structure using the same techniques. In the CuPc based devices, we observed characteristic current density (J)–voltage (V) behavior, indicating that the J–V characteristics are controlled by the trap-free space-charge-limited currents in the high current region, and by the trapped-charge-limited current in the low current region.

Bibliography

Yamamoto, H., Kasajima, H., Yokoyama, W., Sasabe, H., & Adachi, C. (2005). Extremely-high-density carrier injection and transport over 12000Aâcm2 into organic thin films. Applied Physics Letters, 86(8).

Authors 5

Hidetoshi Yamamoto (first)
Hiroki Kasajima (additional)
Wataru Yokoyama (additional)
Hiroyuki Sasabe (additional)
Chihaya Adachi (additional)

References 22 Referenced 76

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10.1143/JJAP.27.L269 / Jpn. J. Appl. Phys., Part 2 (1988)
{'volume-title': 'Electronic Processes in Organic Crystals and Polymers', 'year': '1999', 'key': '2023070301342114900_c7'} / Electronic Processes in Organic Crystals and Polymers (1999)
10.1016/0009-2614(96)00450-2 / Chem. Phys. Lett. (1996)
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{'edition': '2nd ed.', 'volume-title': 'Physics of Semiconductor Devices', 'year': '1981', 'key': '2023070301342114900_c22'} / Physics of Semiconductor Devices (1981)

Dates

Type	When
Created	20 years, 6 months ago (Feb. 11, 2005, 6:01 p.m.)
Deposited	2 years, 1 month ago (July 2, 2023, 9:34 p.m.)
Indexed	4 weeks, 2 days ago (July 30, 2025, 6:44 a.m.)
Issued	20 years, 6 months ago (Feb. 14, 2005)
Published	20 years, 6 months ago (Feb. 14, 2005)
Published Online	20 years, 6 months ago (Feb. 14, 2005)
Published Print	20 years, 6 months ago (Feb. 21, 2005)

Funders 0

None

BibTeX

@article{Yamamoto_2005, title={Extremely-high-density carrier injection and transport over 12000A∕cm2 into organic thin films}, volume={86}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1866230}, DOI={10.1063/1.1866230}, number={8}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Yamamoto, Hidetoshi and Kasajima, Hiroki and Yokoyama, Wataru and Sasabe, Hiroyuki and Adachi, Chihaya}, year={2005}, month=feb }

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  "abstract": "<jats:p>We achieved extremely-high-density steady state carrier injection and transport at over \u223c10000A\u2215cm2 into organic thin films using high thermally conductive substrates, which suppress the temperature rise inside the devices by transferring the joule heat into the substrates. Using a silicon substrate with a high thermal conductivity of 148W\u2215mK and a small size cathode with a radius of r=25\u03bcm, we achieved a maximum current density of Jmax=12222A\u2215cm2 and power density of Pmax\u223c105W\u2215cm2 in an ITO(110nm)\u2215copperphthalocyanine (CuPc) (25nm)\u2215MgAg(100nm)\u2215Ag(10nm) device during a fraction of a second under direct current sweep. Further, we also achieved Jmax=514A\u2215cm2 in a conventional organic light-emitting diode structure using the same techniques. In the CuPc based devices, we observed characteristic current density (J)\u2013voltage (V) behavior, indicating that the J\u2013V characteristics are controlled by the trap-free space-charge-limited currents in the high current region, and by the trapped-charge-limited current in the low current region.</jats:p>",
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