Abstract
We have developed a unique micromechanical method to extract extremely thin graphite samples. Graphite crystallites with thicknesses ranging from 10 to 100nm and lateral size ∼2μm are extracted from bulk. Mesoscopic graphite devices are fabricated from these samples for electric field-dependent conductance measurements. Strong conductance modulation as a function of gate voltage is observed in the thinner crystallite devices. The temperature-dependent resistivity measurements show more boundary scattering contribution in the thinner graphite samples.
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Dates
Type | When |
---|---|
Created | 20 years, 6 months ago (Feb. 4, 2005, 6:04 p.m.) |
Deposited | 2 years, 2 months ago (June 27, 2023, 1:16 p.m.) |
Indexed | 4 weeks ago (July 30, 2025, 6:44 a.m.) |
Issued | 20 years, 6 months ago (Feb. 7, 2005) |
Published | 20 years, 6 months ago (Feb. 7, 2005) |
Published Online | 20 years, 6 months ago (Feb. 7, 2005) |
Published Print | 20 years, 6 months ago (Feb. 14, 2005) |
@article{Zhang_2005, title={Fabrication and electric-field-dependent transport measurements of mesoscopic graphite devices}, volume={86}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1862334}, DOI={10.1063/1.1862334}, number={7}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Zhang, Yuanbo and Small, Joshua P. and Pontius, William V. and Kim, Philip}, year={2005}, month=feb }