Abstract
We report the development of high-mobility carbon-nanotube thin-film transistors fabricated on a polymeric substrate. The active semiconducting channel in the devices is composed of a random two-dimensional network of single-walled carbon nanotubes (SWNTs). The devices exhibit a field-effect mobility of 150cm2∕Vs and a normalized transconductance of 0.5mS∕mm. The ratio of on-current (Ion) to off-current (Ioff) is ∼100 and is limited by metallic SWNTs in the network. With electronic purification of the SWNTs and improved gate capacitance we project that the transconductance can be increased to ∼10–100mS∕mm with a significantly higher value of Ion∕Ioff, thus approaching crystalline semiconductor-like performance on polymeric substrates.
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Dates
Type | When |
---|---|
Created | 20 years, 7 months ago (Jan. 10, 2005, 6:01 p.m.) |
Deposited | 2 years, 1 month ago (July 11, 2023, 8:56 p.m.) |
Indexed | 1 month ago (July 30, 2025, 6:44 a.m.) |
Issued | 20 years, 7 months ago (Jan. 11, 2005) |
Published | 20 years, 7 months ago (Jan. 11, 2005) |
Published Online | 20 years, 7 months ago (Jan. 11, 2005) |
Published Print | 20 years, 7 months ago (Jan. 17, 2005) |
@article{Snow_2005, title={High-mobility carbon-nanotube thin-film transistors on a polymeric substrate}, volume={86}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1854721}, DOI={10.1063/1.1854721}, number={3}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Snow, E. S. and Campbell, P. M. and Ancona, M. G. and Novak, J. P.}, year={2005}, month=jan }