Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

We report the development of high-mobility carbon-nanotube thin-film transistors fabricated on a polymeric substrate. The active semiconducting channel in the devices is composed of a random two-dimensional network of single-walled carbon nanotubes (SWNTs). The devices exhibit a field-effect mobility of 150cm2∕Vs and a normalized transconductance of 0.5mS∕mm. The ratio of on-current (Ion) to off-current (Ioff) is ∼100 and is limited by metallic SWNTs in the network. With electronic purification of the SWNTs and improved gate capacitance we project that the transconductance can be increased to ∼10–100mS∕mm with a significantly higher value of Ion∕Ioff, thus approaching crystalline semiconductor-like performance on polymeric substrates.

Bibliography

Snow, E. S., Campbell, P. M., Ancona, M. G., & Novak, J. P. (2005). High-mobility carbon-nanotube thin-film transistors on a polymeric substrate. Applied Physics Letters, 86(3).

Authors 4
  1. E. S. Snow (first)
  2. P. M. Campbell (additional)
  3. M. G. Ancona (additional)
  4. J. P. Novak (additional)
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Dates
Type When
Created 20 years, 7 months ago (Jan. 10, 2005, 6:01 p.m.)
Deposited 2 years, 1 month ago (July 11, 2023, 8:56 p.m.)
Indexed 1 month ago (July 30, 2025, 6:44 a.m.)
Issued 20 years, 7 months ago (Jan. 11, 2005)
Published 20 years, 7 months ago (Jan. 11, 2005)
Published Online 20 years, 7 months ago (Jan. 11, 2005)
Published Print 20 years, 7 months ago (Jan. 17, 2005)
Funders 0

None

@article{Snow_2005, title={High-mobility carbon-nanotube thin-film transistors on a polymeric substrate}, volume={86}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1854721}, DOI={10.1063/1.1854721}, number={3}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Snow, E. S. and Campbell, P. M. and Ancona, M. G. and Novak, J. P.}, year={2005}, month=jan }