Abstract
High-resolution near edge x-ray absorption spectroscopy and x-ray photoelectron spectroscopy were used to characterize ultrathin plasma-nitrided silicon oxides. The direct observation of interstitial molecular N2 was made by vibrationally resolved N K-edge absorption spectroscopy. The N2 molecules were trapped during the plasma nitridation at the near surface and could be eliminated by annealing via molecular out-diffusion.
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Dates
Type | When |
---|---|
Created | 20 years, 7 months ago (Jan. 6, 2005, 8:15 p.m.) |
Deposited | 2 years, 1 month ago (July 12, 2023, 1:54 a.m.) |
Indexed | 1 month ago (July 30, 2025, 6:44 a.m.) |
Issued | 20 years, 7 months ago (Jan. 4, 2005) |
Published | 20 years, 7 months ago (Jan. 4, 2005) |
Published Online | 20 years, 7 months ago (Jan. 4, 2005) |
Published Print | 20 years, 7 months ago (Jan. 10, 2005) |
@article{Chung_2005, title={Direct observation of interstitial molecular N2 in Si oxynitrides}, volume={86}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1851620}, DOI={10.1063/1.1851620}, number={2}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Chung, Youngsu and Lee, Jae Cheol and Shin, H. J.}, year={2005}, month=jan }