DOI: 10.1063/1.1843286. High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer

High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer

10.1063/1.1843286

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Transparent thin-film transistors (TTFTs) with an amorphous zinc tin oxide channel layer formed via rf magnetron sputter deposition are demonstrated. Field-effect mobilities of 5–15 and 20–50cm2V−1s−1 are obtained for devices post-deposition annealed at 300 and 600°C, respectively. TTFTs processed at 300 and 600°C yield devices with turn-on voltage of 0–15 and −5–5V, respectively. Under both processing conditions, a drain current on-to-off ratio greater than 107 is obtained. Zinc tin oxide is one example of a new class of high performance TTFT channel materials involving amorphous oxides composed of heavy-metal cations with (n−1)d10ns0 (n⩾4) electronic configurations.

Bibliography

Chiang, H. Q., Wager, J. F., Hoffman, R. L., Jeong, J., & Keszler, D. A. (2004). High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer. Applied Physics Letters, 86(1).

Authors 5

H. Q. Chiang (first)
J. F. Wager (additional)
R. L. Hoffman (additional)
J. Jeong (additional)
D. A. Keszler (additional)

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Dates

Type	When
Created	20 years, 7 months ago (Jan. 9, 2005, 9:16 a.m.)
Deposited	2 years, 1 month ago (July 14, 2023, 6:46 p.m.)
Indexed	1 week ago (Aug. 30, 2025, 1:06 p.m.)
Issued	20 years, 8 months ago (Dec. 23, 2004)
Published	20 years, 8 months ago (Dec. 23, 2004)
Published Online	20 years, 8 months ago (Dec. 23, 2004)
Published Print	20 years, 8 months ago (Jan. 3, 2005)

Funders 0

None

BibTeX

@article{Chiang_2004, title={High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer}, volume={86}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1843286}, DOI={10.1063/1.1843286}, number={1}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Chiang, H. Q. and Wager, J. F. and Hoffman, R. L. and Jeong, J. and Keszler, D. A.}, year={2004}, month=dec }

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