DOI: 10.1063/1.1843284. Nanometer-scale studies of point defect distributions in GaMnAs alloys

Nanometer-scale studies of point defect distributions in GaMnAs alloys

10.1063/1.1843284

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We have investigated the concentrations and distributions of point defects in GaMnAs alloys grown by low-temperature molecular-beam epitaxy, using ultrahigh-vacuum cross-sectional scanning tunneling microscopy (XSTM). High-resolution constant-current XSTM reveals “A,” “M,” and “V” defects, associated with AsGa, MnGa, and VAs, respectively. A and V defects are present in all low-temperature-grown layers, while M defects are predominantly located within the GaMnAs alloy layers. In the GaMnAs layers, the concentration of V defects ([V]) increases with the concentration of M defects ([M]), consistent with a Fermi-level-dependent vacancy formation energy. Furthermore, [M] is typically two to three times [A] and [V], suggesting significant compensation of the free carriers associated with MnGa. A quantitative defect pair correlation analysis reveals clustering of nearest V–V pairs and anti-clustering of nearest M–M, M–V, and M–A pairs. For all pair separations greater than 2nm, random distributions of defects are apparent.

Bibliography

Gleason, J. N., Hjelmstad, M. E., Dasika, V. D., Goldman, R. S., Fathpour, S., Charkrabarti, S., & Bhattacharya, P. K. (2004). Nanometer-scale studies of point defect distributions in GaMnAs alloys. Applied Physics Letters, 86(1).

Authors 7

J. N. Gleason (first)
M. E. Hjelmstad (additional)
V. D. Dasika (additional)
R. S. Goldman (additional)
S. Fathpour (additional)
S. Charkrabarti (additional)
P. K. Bhattacharya (additional)

References 23 Referenced 12

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Dates

Type	When
Created	20 years, 7 months ago (Jan. 9, 2005, 9:16 a.m.)
Deposited	2 years, 1 month ago (July 14, 2023, 6:42 p.m.)
Indexed	1 month ago (July 30, 2025, 6:44 a.m.)
Issued	20 years, 8 months ago (Dec. 27, 2004)
Published	20 years, 8 months ago (Dec. 27, 2004)
Published Online	20 years, 8 months ago (Dec. 27, 2004)
Published Print	20 years, 8 months ago (Jan. 3, 2005)

Funders 0

None

BibTeX

@article{Gleason_2004, title={Nanometer-scale studies of point defect distributions in GaMnAs alloys}, volume={86}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1843284}, DOI={10.1063/1.1843284}, number={1}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Gleason, J. N. and Hjelmstad, M. E. and Dasika, V. D. and Goldman, R. S. and Fathpour, S. and Charkrabarti, S. and Bhattacharya, P. K.}, year={2004}, month=dec }

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