DOI: 10.1063/1.1840111. <i>In situ</i> measurements of the critical thickness for strain relaxation in AlGaN∕GaN heterostructures

In situ measurements of the critical thickness for strain relaxation in AlGaN∕GaN heterostructures

10.1063/1.1840111

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Using in situ wafer-curvature measurements of thin-film stress, we determine the critical thickness for strain relaxation in AlxGa1−xN∕GaN heterostructures with 0.14⩽x⩽1. The surface morphology of selected films is examined by atomic force microscopy. Comparison of these measurements with critical-thickness models for brittle fracture and dislocation glide suggests that the onset of strain relaxation occurs by surface fracture for all compositions. Misfit-dislocations follow initial fracture, with slip-system selection occurring under the influence of composition-dependent changes in surface morphology.

Bibliography

Lee, S. R., Koleske, D. D., Cross, K. C., Floro, J. A., Waldrip, K. E., Wise, A. T., & Mahajan, S. (2004). In situ measurements of the critical thickness for strain relaxation in AlGaNâGaN heterostructures. Applied Physics Letters, 85(25), 6164â6166.

Authors 7

S. R. Lee (first)
D. D. Koleske (additional)
K. C. Cross (additional)
J. A. Floro (additional)
K. E. Waldrip (additional)
A. T. Wise (additional)
S. Mahajan (additional)

References 15 Referenced 107

10.1063/1.126087 / Appl. Phys. Lett. (2000)
{'key': '2024020404501435500_c2', 'first-page': '505', 'volume': '743', 'year': '2003', 'journal-title': 'Mater. Res. Soc. Symp. Proc.'} / Mater. Res. Soc. Symp. Proc. (2003)
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Dates

Type	When
Created	20 years, 8 months ago (Dec. 15, 2004, 6:36 p.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 11:50 p.m.)
Indexed	2 months, 1 week ago (June 17, 2025, 9:15 a.m.)
Issued	20 years, 8 months ago (Dec. 20, 2004)
Published	20 years, 8 months ago (Dec. 20, 2004)
Published Print	20 years, 8 months ago (Dec. 20, 2004)

Funders 0

None

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