Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

InN nanowires with high efficiency photoluminescence emission at 0.80eV are reported. InN nanowires were synthesized via a vapor solid growth mechanism from high purity indium metal and ammonia. The products consist of only hexagonal wurtzite phase InN. Scanning electron microscopy showed wires with diameters of 50–100nm and having fairly smooth morphologies. High-resolution transmission electron microscopy revealed high quality, single crystal InN nanowires which grew in the ⟨0001⟩ direction.

Bibliography

Johnson, M. C., Lee, C. J., Bourret-Courchesne, E. D., Konsek, S. L., Aloni, S., Han, W. Q., & Zettl, A. (2004). Growth and morphology of 0.80eV photoemitting indium nitride nanowires. Applied Physics Letters, 85(23), 5670–5672.

Authors 7
  1. M. C. Johnson (first)
  2. C. J. Lee (additional)
  3. E. D. Bourret-Courchesne (additional)
  4. S. L. Konsek (additional)
  5. S. Aloni (additional)
  6. W. Q. Han (additional)
  7. A. Zettl (additional)
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Dates
Type When
Created 20 years, 8 months ago (Dec. 8, 2004, 6:42 p.m.)
Deposited 1 year, 7 months ago (Feb. 3, 2024, 11:42 p.m.)
Indexed 3 months, 2 weeks ago (May 22, 2025, 4:24 p.m.)
Issued 20 years, 9 months ago (Dec. 6, 2004)
Published 20 years, 9 months ago (Dec. 6, 2004)
Published Print 20 years, 9 months ago (Dec. 6, 2004)
Funders 0

None

@article{Johnson_2004, title={Growth and morphology of 0.80eV photoemitting indium nitride nanowires}, volume={85}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1831563}, DOI={10.1063/1.1831563}, number={23}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Johnson, M. C. and Lee, C. J. and Bourret-Courchesne, E. D. and Konsek, S. L. and Aloni, S. and Han, W. Q. and Zettl, A.}, year={2004}, month=dec, pages={5670–5672} }