Abstract
InN nanowires with high efficiency photoluminescence emission at 0.80eV are reported. InN nanowires were synthesized via a vapor solid growth mechanism from high purity indium metal and ammonia. The products consist of only hexagonal wurtzite phase InN. Scanning electron microscopy showed wires with diameters of 50–100nm and having fairly smooth morphologies. High-resolution transmission electron microscopy revealed high quality, single crystal InN nanowires which grew in the ⟨0001⟩ direction.
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Dates
Type | When |
---|---|
Created | 20 years, 8 months ago (Dec. 8, 2004, 6:42 p.m.) |
Deposited | 1 year, 7 months ago (Feb. 3, 2024, 11:42 p.m.) |
Indexed | 3 months, 2 weeks ago (May 22, 2025, 4:24 p.m.) |
Issued | 20 years, 9 months ago (Dec. 6, 2004) |
Published | 20 years, 9 months ago (Dec. 6, 2004) |
Published Print | 20 years, 9 months ago (Dec. 6, 2004) |
@article{Johnson_2004, title={Growth and morphology of 0.80eV photoemitting indium nitride nanowires}, volume={85}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1831563}, DOI={10.1063/1.1831563}, number={23}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Johnson, M. C. and Lee, C. J. and Bourret-Courchesne, E. D. and Konsek, S. L. and Aloni, S. and Han, W. Q. and Zettl, A.}, year={2004}, month=dec, pages={5670–5672} }