Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

Organic field-effect transistors with a polymeric electret as gate insulator and fullerenes as a molecular semiconductor were fabricated. We observed an amplification of the drain–source current Ids on the order of 104 upon applying a gate voltage Vg. Reversing the gate voltage Vg features large metastable hysteresis in the transfer characteristics Ids(Vg) with a long retention time. The observation of a switchable channel current Ids is proposed to originate from charge storage in the organic electret. As such, this device is a demonstration of an organic nonvolatile memory element switchable with the gate voltage.

Bibliography

Singh, Th. B., Marjanović, N., Matt, G. J., Sariciftci, N. S., Schwödiauer, R., & Bauer, S. (2004). Nonvolatile organic field-effect transistor memory element with a polymeric gate electret. Applied Physics Letters, 85(22), 5409–5411.

Authors 6
  1. Th. B. Singh (first)
  2. N. Marjanović (additional)
  3. G. J. Matt (additional)
  4. N. S. Sariciftci (additional)
  5. R. Schwödiauer (additional)
  6. S. Bauer (additional)
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Dates
Type When
Created 20 years, 8 months ago (Dec. 1, 2004, 6:46 p.m.)
Deposited 1 year, 6 months ago (Feb. 3, 2024, 11:35 p.m.)
Indexed 4 months, 3 weeks ago (April 4, 2025, 5:04 a.m.)
Issued 20 years, 8 months ago (Nov. 29, 2004)
Published 20 years, 8 months ago (Nov. 29, 2004)
Published Print 20 years, 8 months ago (Nov. 29, 2004)
Funders 0

None

@article{Singh_2004, title={Nonvolatile organic field-effect transistor memory element with a polymeric gate electret}, volume={85}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1828236}, DOI={10.1063/1.1828236}, number={22}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Singh, Th. B. and Marjanović, N. and Matt, G. J. and Sariciftci, N. S. and Schwödiauer, R. and Bauer, S.}, year={2004}, month=nov, pages={5409–5411} }