Abstract
Organic field-effect transistors with a polymeric electret as gate insulator and fullerenes as a molecular semiconductor were fabricated. We observed an amplification of the drain–source current Ids on the order of 104 upon applying a gate voltage Vg. Reversing the gate voltage Vg features large metastable hysteresis in the transfer characteristics Ids(Vg) with a long retention time. The observation of a switchable channel current Ids is proposed to originate from charge storage in the organic electret. As such, this device is a demonstration of an organic nonvolatile memory element switchable with the gate voltage.
References
27
Referenced
201
{'key': '2024020404354579000_c1', 'volume-title': 'Nanoelectronics and Information Technology: Advanced Electronic Materials and Novel Devices', 'author': 'Waser', 'year': '2003'}
/ Nanoelectronics and Information Technology: Advanced Electronic Materials and Novel Devices by Waser (2003)10.1002/j.1538-7305.1967.tb01737.x
/ Bell Syst. Tech. J. (1967){'key': '2024020404354579000_c2b', 'first-page': '496', 'volume-title': 'Physics of Semiconductor Devices', 'year': '1981'}
/ Physics of Semiconductor Devices (1981){'key': '2024020404354579000_c3', 'first-page': '138', 'volume': '276', 'year': '1997', 'journal-title': 'Science'}
/ Science (1997)10.1109/6.861775
/ IBM J. Res. Dev. (2001)10.1002/adfm.200390006
/ Adv. Funct. Mater. (2003)10.1063/1.1622799
/ Appl. Phys. Lett. (2003)10.1073/pnas.091588098
/ Proc. Natl. Acad. Sci. U.S.A. (2001)10.1063/1.1427136
/ J. Appl. Phys. (2002)10.1063/1.1527691
/ Appl. Phys. Lett. (2002)10.1016/S0038-1101(99)00281-6
/ Solid-State Electron. (2000)10.1063/1.1379059
/ Appl. Phys. Lett. (2001)10.1002/adma.200306187
/ Adv. Mater. (Weinheim, Ger.) (2004)10.1016/S0379-6779(02)01193-1
/ Synth. Met. (2003)10.1117/12.530655
/ Proc. SPIE (2004)10.1063/1.1769081
/ Appl. Phys. Lett. (2004)10.1016/j.cplett.2003.07.025
/ Chem. Phys. Lett. (2003)10.1021/ja034944a
/ J. Am. Chem. Soc. (2003)10.1063/1.1695193
/ Appl. Phys. Lett. (2004)10.1063/1.115503
/ Appl. Phys. Lett. (1995){'key': '2024020404354579000_c19'}
10.1002/adfm.200390004
/ Adv. Funct. Mater. (2003)10.1063/1.1651642
/ Appl. Phys. Lett. (2004)10.1002/adma.200305623
/ Adv. Mater. (Weinheim, Ger.) (2003){'key': '2024020404354579000_c23', 'volume-title': 'Electrets', 'year': '1999'}
/ Electrets (1999)10.1016/0167-577X(94)90253-4
/ Mater. Lett. (1994)10.1016/S0032-3861(98)00563-1
/ Polymer (1999)
Dates
Type | When |
---|---|
Created | 20 years, 8 months ago (Dec. 1, 2004, 6:46 p.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 11:35 p.m.) |
Indexed | 4 months, 3 weeks ago (April 4, 2025, 5:04 a.m.) |
Issued | 20 years, 8 months ago (Nov. 29, 2004) |
Published | 20 years, 8 months ago (Nov. 29, 2004) |
Published Print | 20 years, 8 months ago (Nov. 29, 2004) |
@article{Singh_2004, title={Nonvolatile organic field-effect transistor memory element with a polymeric gate electret}, volume={85}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1828236}, DOI={10.1063/1.1828236}, number={22}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Singh, Th. B. and Marjanović, N. and Matt, G. J. and Sariciftci, N. S. and Schwödiauer, R. and Bauer, S.}, year={2004}, month=nov, pages={5409–5411} }