DOI: 10.1063/1.1825615. As-doped p-type ZnO produced by an evaporation∕sputtering process

As-doped p-type ZnO produced by an evaporation∕sputtering process

10.1063/1.1825615

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Strongly p-type ZnO is produced by the following sequence of steps: (1) evaporation of Zn3As2 on a fused-quartz substrate at 350°C; and (2) sputtering of ZnO with substrate held at 450°C. The electrical characteristics include: resistivity of 0.4Ωcm, a mobility of 4cm2∕Vs, and a hole concentration of about 4×1018cm−3. This resistivity is among the best (lowest) ever reported for p-type ZnO. Secondary-ion mass spectroscopic analysis gives an average As concentration about 5×1019cm−3, and a simple one-band fit of the temperature-dependent mobility curve yields an acceptor concentration of about 9×1019cm−3. This is strong evidence that the p-type dopant involves As, although it is not clear whether the acceptor is simply AsO or the recently suggested AsZn−2VZn.

Bibliography

Look, D. C., Renlund, G. M., Burgener, R. H., & Sizelove, J. R. (2004). As-doped p-type ZnO produced by an evaporationâsputtering process. Applied Physics Letters, 85(22), 5269â5271.

Authors 4

D. C. Look (first)
G. M. Renlund (additional)
R. H. Burgener (additional)
J. R. Sizelove (additional)

References 33 Referenced 258

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Dates

Type	When
Created	20 years, 8 months ago (Dec. 1, 2004, 6:46 p.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 11:40 p.m.)
Indexed	3 months, 3 weeks ago (May 3, 2025, 12:27 p.m.)
Issued	20 years, 8 months ago (Nov. 29, 2004)
Published	20 years, 8 months ago (Nov. 29, 2004)
Published Print	20 years, 8 months ago (Nov. 29, 2004)

Funders 0

None

BibTeX

@article{Look_2004, title={As-doped p-type ZnO produced by an evaporation‚àïsputtering process}, volume={85}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1825615}, DOI={10.1063/1.1825615}, number={22}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Look, D. C. and Renlund, G. M. and Burgener, R. H. and Sizelove, J. R.}, year={2004}, month=nov, pages={5269‚Äì5271} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        5,
        3
      ]
    ],
    "date-time": "2025-05-03T16:27:18Z",
    "timestamp": 1746289638794
  },
  "reference-count": 33,
  "publisher": "AIP Publishing",
  "issue": "22",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2004,
        11,
        29
      ]
    ]
  },
  "abstract": "<jats:p>Strongly p-type ZnO is produced by the following sequence of steps: (1) evaporation of Zn3As2 on a fused-quartz substrate at 350\u00b0C; and (2) sputtering of ZnO with substrate held at 450\u00b0C. The electrical characteristics include: resistivity of 0.4\u03a9cm, a mobility of 4cm2\u2215Vs, and a hole concentration of about 4\u00d71018cm\u22123. This resistivity is among the best (lowest) ever reported for p-type ZnO. Secondary-ion mass spectroscopic analysis gives an average As concentration about 5\u00d71019cm\u22123, and a simple one-band fit of the temperature-dependent mobility curve yields an acceptor concentration of about 9\u00d71019cm\u22123. This is strong evidence that the p-type dopant involves As, although it is not clear whether the acceptor is simply AsO or the recently suggested AsZn\u22122VZn.</jats:p>",
  "DOI": "10.1063/1.1825615",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2004,
        12,
        1
      ]
    ],
    "date-time": "2004-12-01T23:46:34Z",
    "timestamp": 1101944794000
  },
  "page": "5269-5271",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 258,
  "title": "As-doped p-type ZnO produced by an evaporation\u2215sputtering process",
  "prefix": "10.1063",
  "volume": "85",
  "author": [
    {
      "given": "D. C.",
      "family": "Look",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Materials and Manufacturing Directorate, Air Force Research Laboratory , Wright-Patterson Air Force Base, Ohio 45433 and , Dayton, Ohio 45435"
        },
        {
          "name": "Semiconductor Research Center, Wright State University , Wright-Patterson Air Force Base, Ohio 45433 and , Dayton, Ohio 45435"
        }
      ]
    },
    {
      "given": "G. M.",
      "family": "Renlund",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "ON International, Inc. , 418 West Winchester Street, Salt Lake City, Utah 84107"
        }
      ]
    },
    {
      "suffix": "II",
      "given": "R. H.",
      "family": "Burgener",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "ON International, Inc. , 418 West Winchester Street, Salt Lake City, Utah 84107"
        }
      ]
    },
    {
      "given": "J. R.",
      "family": "Sizelove",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Materials and Manufacturing Directorate, Air Force Research Laboratory , Wright-Patterson Air Force Base, Ohio 45433"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020404401973200_c1",
      "doi-asserted-by": "publisher",
      "first-page": "229",
      "DOI": "10.1016/0022-3697(57)90027-6",
      "volume": "3",
      "year": "1957",
      "journal-title": "J. Phys. Chem. Solids"
    },
    {
      "key": "2024020404401973200_c2",
      "doi-asserted-by": "crossref",
      "first-page": "327",
      "DOI": "10.1016/S0022-3697(74)80026-0",
      "volume": "35",
      "year": "1974",
      "journal-title": "J. Phys. Chem. Solids"
    },
    {
      "key": "2024020404401973200_c3",
      "doi-asserted-by": "publisher",
      "first-page": "383",
      "DOI": "10.1016/S0921-5107(00)00604-8",
      "volume": "80",
      "year": "2001",
      "journal-title": "Mater. Sci. Eng., B"
    },
    {
      "key": "2024020404401973200_c6",
      "doi-asserted-by": "crossref",
      "first-page": "872",
      "DOI": "10.1002/pssc.200304149",
      "volume": "1",
      "year": "2004",
      "journal-title": "Phys. Status Solidi C"
    },
    {
      "key": "2024020404401973200_c7",
      "doi-asserted-by": "publisher",
      "first-page": "1012",
      "DOI": "10.1103/PhysRevLett.85.1012",
      "volume": "85",
      "year": "2000",
      "journal-title": "Phys. Rev. Lett."
    },
    {
      "key": "2024020404401973200_c8",
      "doi-asserted-by": "publisher",
      "first-page": "2552",
      "DOI": "10.1103/PhysRevLett.82.2552",
      "volume": "82",
      "year": "1999",
      "journal-title": "Phys. Rev. Lett."
    },
    {
      "key": "2024020404401973200_c9",
      "doi-asserted-by": "publisher",
      "first-page": "231",
      "DOI": "10.1002/pssb.200301962",
      "volume": "241",
      "year": "2004",
      "journal-title": "Phys. Status Solidi B"
    },
    {
      "key": "2024020404401973200_c10",
      "doi-asserted-by": "publisher",
      "first-page": "L1453",
      "DOI": "10.1143/JJAP.36.L1453",
      "volume": "36",
      "year": "1997",
      "journal-title": "Jpn. J. Appl. Phys., Part 2"
    },
    {
      "key": "2024020404401973200_c11",
      "doi-asserted-by": "publisher",
      "first-page": "L1205",
      "DOI": "10.1143/JJAP.38.L1205",
      "volume": "38",
      "year": "1999",
      "journal-title": "Jpn. J. Appl. Phys., Part 2"
    },
    {
      "key": "2024020404401973200_c12",
      "doi-asserted-by": "publisher",
      "first-page": "330",
      "DOI": "10.1016/S0022-0248(00)00437-1",
      "volume": "216",
      "year": "2000",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2024020404401973200_c13",
      "first-page": "140",
      "volume": "302\u2013303",
      "year": "2001",
      "journal-title": "Physica B"
    },
    {
      "key": "2024020404401973200_c14",
      "doi-asserted-by": "publisher",
      "first-page": "135",
      "DOI": "10.1016/S0022-0248(00)00952-0",
      "volume": "223",
      "year": "2001",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2024020404401973200_c15",
      "doi-asserted-by": "publisher",
      "first-page": "575",
      "DOI": "10.1088/0268-1242/16/7/308",
      "volume": "16",
      "year": "2001",
      "journal-title": "Semicond. Sci. Technol."
    },
    {
      "key": "2024020404401973200_c16",
      "doi-asserted-by": "publisher",
      "first-page": "L1281",
      "DOI": "10.1143/JJAP.41.L1281",
      "volume": "41",
      "year": "2002",
      "journal-title": "Jpn. J. Appl. Phys., Part 2"
    },
    {
      "key": "2024020404401973200_c17",
      "doi-asserted-by": "publisher",
      "first-page": "1195",
      "DOI": "10.1063/1.1449528",
      "volume": "80",
      "year": "2002",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020404401973200_c18",
      "first-page": "229",
      "volume": "19",
      "year": "2002",
      "journal-title": "Opt. Mater. (Amsterdam, Neth.)"
    },
    {
      "key": "2024020404401973200_c19",
      "doi-asserted-by": "publisher",
      "first-page": "1830",
      "DOI": "10.1063/1.1504875",
      "volume": "81",
      "year": "2002",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020404401973200_c20",
      "doi-asserted-by": "publisher",
      "first-page": "1342",
      "DOI": "10.1116/1.1584036",
      "volume": "21",
      "year": "2003",
      "journal-title": "J. Vac. Sci. Technol. A"
    },
    {
      "key": "2024020404401973200_c21",
      "doi-asserted-by": "publisher",
      "first-page": "177",
      "DOI": "10.1016/S0169-4332(03)00151-X",
      "volume": "210",
      "year": "2003",
      "journal-title": "Appl. Surf. Sci."
    },
    {
      "key": "2024020404401973200_c22",
      "doi-asserted-by": "crossref",
      "first-page": "8",
      "DOI": "10.1557/JMR.2003.0003",
      "volume": "18",
      "year": "2003",
      "journal-title": "J. Mater. Res."
    },
    {
      "key": "2024020404401973200_c23",
      "doi-asserted-by": "publisher",
      "first-page": "396",
      "DOI": "10.1063/1.1527210",
      "volume": "93",
      "year": "2003",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020404401973200_c24",
      "doi-asserted-by": "publisher",
      "first-page": "249",
      "DOI": "10.1023/A:1022347910122",
      "volume": "22",
      "year": "2003",
      "journal-title": "J. Mater. Sci. Lett."
    },
    {
      "key": "2024020404401973200_c25",
      "doi-asserted-by": "publisher",
      "first-page": "C56",
      "DOI": "10.1149/1.1554292",
      "volume": "6",
      "year": "2003",
      "journal-title": "Electrochem. Solid-State Lett."
    },
    {
      "key": "2024020404401973200_c26",
      "doi-asserted-by": "publisher",
      "first-page": "87",
      "DOI": "10.1063/1.1590423",
      "volume": "83",
      "year": "2003",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020404401973200_c27",
      "doi-asserted-by": "publisher",
      "first-page": "63",
      "DOI": "10.1063/1.1591064",
      "volume": "83",
      "year": "2003",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020404401973200_c28",
      "doi-asserted-by": "publisher",
      "first-page": "3311",
      "DOI": "10.1016/S0167-577X(03)00054-5",
      "volume": "57",
      "year": "2003",
      "journal-title": "Mater. Lett."
    },
    {
      "key": "2024020404401973200_c29",
      "doi-asserted-by": "publisher",
      "first-page": "293",
      "DOI": "10.1016/S0022-0248(03)01241-7",
      "volume": "255",
      "year": "2003",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2024020404401973200_c30",
      "doi-asserted-by": "publisher",
      "first-page": "3474",
      "DOI": "10.1063/1.1737795",
      "volume": "84",
      "year": "2004",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020404401973200_c32",
      "doi-asserted-by": "crossref",
      "first-page": "624",
      "DOI": "10.1002/pssb.200304271",
      "volume": "241",
      "year": "2004",
      "journal-title": "Phys. Status Solidi B"
    },
    {
      "key": "2024020404401973200_c33",
      "doi-asserted-by": "publisher",
      "first-page": "9746",
      "DOI": "10.1103/PhysRevB.38.9746",
      "volume": "38",
      "year": "1988",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2024020404401973200_c34",
      "doi-asserted-by": "crossref",
      "first-page": "2203",
      "DOI": "10.1002/pssa.200404803",
      "volume": "201",
      "year": "2004",
      "journal-title": "Phys. Status Solidi A"
    },
    {
      "key": "2024020404401973200_c35",
      "doi-asserted-by": "publisher",
      "first-page": "073202",
      "DOI": "10.1103/PhysRevB.66.073202",
      "volume": "66",
      "year": "2002",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2024020404401973200_c36",
      "doi-asserted-by": "publisher",
      "first-page": "155504",
      "DOI": "10.1103/PhysRevLett.92.155504",
      "volume": "92",
      "year": "2004",
      "journal-title": "Phys. Rev. Lett."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/85/22/5269/18602260/5269_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/85/22/5269/18602260/5269_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        4
      ]
    ],
    "date-time": "2024-02-04T04:40:30Z",
    "timestamp": 1707021630000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/85/22/5269/911643/As-doped-p-type-ZnO-produced-by-an-evaporation"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2004,
        11,
        29
      ]
    ]
  },
  "references-count": 33,
  "journal-issue": {
    "issue": "22",
    "published-print": {
      "date-parts": [
        [
          2004,
          11,
          29
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.1825615",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2004,
        11,
        29
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2004,
        11,
        29
      ]
    ]
  }
}