Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

The properties of the dielectric strongly influence the performance of organic thin-film transistors. In this letter, we show experimental results that quantify the influence of the roughness of the dielectric on the mobility of pentacene transistors and discuss the cause of it. We consider the movement of charge carriers out of the “roughness valleys” or across those valleys at the dielectric–semiconductor interface as the limiting step for the roughness-dependent mobility in the transistor channel.

Bibliography

Steudel, S., De Vusser, S., De Jonge, S., Janssen, D., Verlaak, S., Genoe, J., & Heremans, P. (2004). Influence of the dielectric roughness on the performance of pentacene transistors. Applied Physics Letters, 85(19), 4400–4402.

Authors 7
  1. Soeren Steudel (first)
  2. Stijn De Vusser (additional)
  3. Stijn De Jonge (additional)
  4. Dimitri Janssen (additional)
  5. Stijn Verlaak (additional)
  6. Jan Genoe (additional)
  7. Paul Heremans (additional)
References 11 Referenced 352
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Dates
Type When
Created 20 years, 9 months ago (Nov. 8, 2004, 6:06 p.m.)
Deposited 1 year, 7 months ago (Feb. 3, 2024, 11:26 p.m.)
Indexed 1 month, 3 weeks ago (July 11, 2025, 6:46 a.m.)
Issued 20 years, 9 months ago (Nov. 8, 2004)
Published 20 years, 9 months ago (Nov. 8, 2004)
Published Print 20 years, 9 months ago (Nov. 8, 2004)
Funders 0

None

@article{Steudel_2004, title={Influence of the dielectric roughness on the performance of pentacene transistors}, volume={85}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1815042}, DOI={10.1063/1.1815042}, number={19}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Steudel, Soeren and De Vusser, Stijn and De Jonge, Stijn and Janssen, Dimitri and Verlaak, Stijn and Genoe, Jan and Heremans, Paul}, year={2004}, month=nov, pages={4400–4402} }