DOI: 10.1063/1.1812581. Observation of ferromagnetism above 900K in Cr–GaN and Cr

Observation of ferromagnetism above 900K in Cr–GaN and Cr–AlN

10.1063/1.1812581

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We report ferromagnetism at over 900K in Cr–GaN and Cr–AlN thin films. The magnetic properties vary as a function of Cr concentration with 60%, and 20%, of the Cr being magnetically active at 3% doping in GaN, and 7% in AlN, respectively. In the GaN sample with the highest magnetically active Cr (60%), channeling Rutherford backscattering indicates that over 70% of Cr impurities are located on substitutional sites. These results give indisputable evidence that substitutional Cr defects are involved in the magnetic behavior. While Cr–AlN is highly resistive, Cr–GaN exhibits properties characteristic of hopping conduction including T−1∕2 resistivity dependence and small Hall mobility (0.06cm2∕Vs). A large negative magnetoresistance is attributed to the influence of the magnetic field on the quantum interference between the many paths linking two hopping sites. The results strongly suggest that ferromagnetism in Cr–GaN and Cr–AlN can be attributed to the double exchange mechanism as a result of hopping between near-midgap substitutional Cr impurity bands.

Bibliography

Liu, H. X., Wu, S. Y., Singh, R. K., Gu, L., Smith, D. J., Newman, N., Dilley, N. R., Montes, L., & Simmonds, M. B. (2004). Observation of ferromagnetism above 900K in CrâGaN and CrâAlN. Applied Physics Letters, 85(18), 4076â4078.

Authors 9

H. X. Liu (first)
Stephen Y. Wu (additional)
R. K. Singh (additional)
Lin Gu (additional)
David J. Smith (additional)
N. Newman (additional)
N. R. Dilley (additional)
L. Montes (additional)
M. B. Simmonds (additional)

References 22 Referenced 208

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Dates

Type	When
Created	20 years, 9 months ago (Nov. 3, 2004, 6:48 p.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 11:21 p.m.)
Indexed	4 weeks, 1 day ago (July 25, 2025, 6:51 a.m.)
Issued	20 years, 9 months ago (Nov. 1, 2004)
Published	20 years, 9 months ago (Nov. 1, 2004)
Published Print	20 years, 9 months ago (Nov. 1, 2004)

Funders 0

None

BibTeX

@article{Liu_2004, title={Observation of ferromagnetism above 900K in Cr–GaN and Cr–AlN}, volume={85}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1812581}, DOI={10.1063/1.1812581}, number={18}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Liu, H. X. and Wu, Stephen Y. and Singh, R. K. and Gu, Lin and Smith, David J. and Newman, N. and Dilley, N. R. and Montes, L. and Simmonds, M. B.}, year={2004}, month=nov, pages={4076–4078} }

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  "abstract": "<jats:p>We report ferromagnetism at over 900K in Cr\u2013GaN and Cr\u2013AlN thin films. The magnetic properties vary as a function of Cr concentration with 60%, and 20%, of the Cr being magnetically active at 3% doping in GaN, and 7% in AlN, respectively. In the GaN sample with the highest magnetically active Cr (60%), channeling Rutherford backscattering indicates that over 70% of Cr impurities are located on substitutional sites. These results give indisputable evidence that substitutional Cr defects are involved in the magnetic behavior. While Cr\u2013AlN is highly resistive, Cr\u2013GaN exhibits properties characteristic of hopping conduction including T\u22121\u22152 resistivity dependence and small Hall mobility (0.06cm2\u2215Vs). A large negative magnetoresistance is attributed to the influence of the magnetic field on the quantum interference between the many paths linking two hopping sites. The results strongly suggest that ferromagnetism in Cr\u2013GaN and Cr\u2013AlN can be attributed to the double exchange mechanism as a result of hopping between near-midgap substitutional Cr impurity bands.</jats:p>",
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