Abstract
Scanning probe microscopy is an established tool for characterization of the linear static and frequency-dependent lateral electronic transport in materials and devices at the nanoscale. In this letter, a modified scanning impedance microscopy (SIM) technique is proposed to extend the nanoscale transport measurements of intrinsic material properties to the nonlinear regime, through detection of frequency harmonics, and exemplified by a detailed study of a prototypical metal–semiconductor interface. The imaging mechanism, surface–tip contrast transfer, optimal experimental conditions, and potential applications of nonlinear SIM are discussed. This technique can be readily transferred to most cantilever-based scanning probe microscopes.
References
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Dates
Type | When |
---|---|
Created | 20 years, 9 months ago (Nov. 3, 2004, 6:48 p.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 11:25 p.m.) |
Indexed | 1 year, 6 months ago (Feb. 3, 2024, 11:40 p.m.) |
Issued | 20 years, 10 months ago (Nov. 1, 2004) |
Published | 20 years, 10 months ago (Nov. 1, 2004) |
Published Print | 20 years, 10 months ago (Nov. 1, 2004) |
@article{Shin_2004, title={Nonlinear transport imaging by scanning impedance microscopy}, volume={85}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1812372}, DOI={10.1063/1.1812372}, number={18}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Shin, J. and Meunier, V. and Baddorf, A. P. and Kalinin, S. V.}, year={2004}, month=nov, pages={4240–4242} }