DOI: 10.1063/1.1802381. Effects of hydrogen annealing on heteroepitaxial-Ge layers on Si: Surface roughness and electrical quality

Effects of hydrogen annealing on heteroepitaxial-Ge layers on Si: Surface roughness and electrical quality

10.1063/1.1802381

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We have studied the effect of hydrogen annealing on the surface roughness of germanium (Ge) layers grown by chemical vapor deposition on silicon using atomic force microscopy and cross-sectional high resolution scanning electron microscopy (HR-SEM). Our results indicate a strong reduction of roughness that approaches 90% at 825°C. The smoother Ge surface allowed for the fabrication of metal-oxide-semiconductor capacitors using germanium oxynitride (GeOxNy) as the gate dielectric. Electrical quality was studied using high frequency capacitance–voltage characteristic of epi-Ge showing negligible hysteresis. We discuss the results in terms of Ge–H cluster formation, which lowers the diffusion barrier, allowing for higher diffusivity and surface mobility. The temperature dependence shows tapering off for temperatures exceeding 800°C, indicating a barrier reduction of ∼92meV.

Bibliography

Nayfeh, A., Chui, C. O., Saraswat, K. C., & Yonehara, T. (2004). Effects of hydrogen annealing on heteroepitaxial-Ge layers on Si: Surface roughness and electrical quality. Applied Physics Letters, 85(14), 2815â2817.

Authors 4

Ammar Nayfeh (first)
Chi On Chui (additional)
Krishna C. Saraswat (additional)
Takao Yonehara (additional)

References 6 Referenced 143

10.1109/LED.2002.801319 / IEEE Electron Device Lett. (2002)
10.1109/LPT.2003.818683 / IEEE Photonics Technol. Lett. (2003)
10.1016/S0040-6090(01)01570-X / Thin Solid Films (2002)
10.1063/1.112818 / Appl. Phys. Lett. (1994)
10.1038/18185 / Nature (London) (1999)
10.1109/LED.2004.827285 / IEEE Electron Device Lett. (2004)

Dates

Type	When
Created	20 years, 10 months ago (Oct. 14, 2004, 6:14 p.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 11:05 p.m.)
Indexed	3 weeks ago (Aug. 7, 2025, 4:47 p.m.)
Issued	20 years, 10 months ago (Oct. 4, 2004)
Published	20 years, 10 months ago (Oct. 4, 2004)
Published Print	20 years, 10 months ago (Oct. 4, 2004)

Funders 0

None

BibTeX

@article{Nayfeh_2004, title={Effects of hydrogen annealing on heteroepitaxial-Ge layers on Si: Surface roughness and electrical quality}, volume={85}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1802381}, DOI={10.1063/1.1802381}, number={14}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Nayfeh, Ammar and Chui, Chi On and Saraswat, Krishna C. and Yonehara, Takao}, year={2004}, month=oct, pages={2815–2817} }

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