DOI: 10.1063/1.1794375. Ambipolar pentacene field-effect transistors with calcium source-drain electrodes

Ambipolar pentacene field-effect transistors with calcium source-drain electrodes

10.1063/1.1794375

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Field-effect transistors consisted of vacuum-sublimed polycrystalline pentacene films and calcium source-drain electrodes were prepared and device characteristics were evaluated in an oxygen-free condition. The field-effect transistor showed typical ambipolar characteristics and field-effect hole mobility of 4.5×10−4cm2/Vs and field-effect electron mobility of 2.7×10−5cm2∕Vs were estimated from saturation currents. Appearance of an electron enhancement mode in pentacene field-effect transistors was ascribed to the lowering of barrier for electron injection at source-drain electrodes. Effective elimination of electron traps using an oxygen-free condition was found to be another requirement for the observation of ambipolar behavior in pentacene.

Bibliography

Yasuda, T., Goto, T., Fujita, K., & Tsutsui, T. (2004). Ambipolar pentacene field-effect transistors with calcium source-drain electrodes. Applied Physics Letters, 85(11), 2098â2100.

Authors 4

Takeshi Yasuda (first)
Takeshi Goto (additional)
Katsuhiko Fujita (additional)
Tetsuo Tsutsui (additional)

References 17 Referenced 218

10.1063/1.1631736 / Appl. Phys. Lett. (2003)
10.1063/1.1511826 / J. Appl. Phys. (2002)
10.1063/1.125614 / Appl. Phys. Lett. (2000)
10.1143/JJAP.36.L718 / Jpn. J. Appl. Phys., Part 2 (1997)
10.1038/nmat978 / Nat. Mater. (2003)
10.1063/1.115728 / Appl. Phys. Lett. (1996)
10.1002/adma.200305200 / Adv. Mater. (Weinheim, Ger.) (2003)
{'key': '2024020403522826700_c8', 'volume-title': 'Electronic Processes in Organic Crystals and Polymers', 'year': '1999', 'edition': '2nd ed.'} / Electronic Processes in Organic Crystals and Polymers (1999)
10.1143/JJAP.42.L1275 / Jpn. J. Appl. Phys., Part 2 (2003)
10.1063/1.115503 / Appl. Phys. Lett. (1995)
10.1021/ja962461j / J. Am. Chem. Soc. (1996)
10.1063/1.1415374 / Appl. Phys. Lett. (2001)
10.1143/JJAP.42.6614 / Jpn. J. Appl. Phys., Part 1 (2003)
10.1063/1.1704874 / Appl. Phys. Lett. (2004)
{'key': '2024020403522826700_c15', 'first-page': '413', 'volume': '413', 'year': '1996', 'journal-title': 'Mater. Res. Soc. Symp. Proc.'} / Mater. Res. Soc. Symp. Proc. (1996)
10.1063/1.1527983 / Appl. Phys. Lett. (2002)
10.1063/1.1485129 / Appl. Phys. Lett. (2002)

Dates

Type	When
Created	20 years, 11 months ago (Sept. 17, 2004, 6:02 p.m.)
Deposited	1 year, 7 months ago (Feb. 3, 2024, 10:52 p.m.)
Indexed	1 month ago (July 30, 2025, 10:32 a.m.)
Issued	20 years, 11 months ago (Sept. 13, 2004)
Published	20 years, 11 months ago (Sept. 13, 2004)
Published Print	20 years, 11 months ago (Sept. 13, 2004)

Funders 0

None

BibTeX

@article{Yasuda_2004, title={Ambipolar pentacene field-effect transistors with calcium source-drain electrodes}, volume={85}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1794375}, DOI={10.1063/1.1794375}, number={11}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Yasuda, Takeshi and Goto, Takeshi and Fujita, Katsuhiko and Tsutsui, Tetsuo}, year={2004}, month=sep, pages={2098–2100} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        7,
        30
      ]
    ],
    "date-time": "2025-07-30T14:32:47Z",
    "timestamp": 1753885967386
  },
  "reference-count": 17,
  "publisher": "AIP Publishing",
  "issue": "11",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2004,
        9,
        13
      ]
    ]
  },
  "abstract": "<jats:p>Field-effect transistors consisted of vacuum-sublimed polycrystalline pentacene films and calcium source-drain electrodes were prepared and device characteristics were evaluated in an oxygen-free condition. The field-effect transistor showed typical ambipolar characteristics and field-effect hole mobility of 4.5\u00d710\u22124cm2/Vs and field-effect electron mobility of 2.7\u00d710\u22125cm2\u2215Vs were estimated from saturation currents. Appearance of an electron enhancement mode in pentacene field-effect transistors was ascribed to the lowering of barrier for electron injection at source-drain electrodes. Effective elimination of electron traps using an oxygen-free condition was found to be another requirement for the observation of ambipolar behavior in pentacene.</jats:p>",
  "DOI": "10.1063/1.1794375",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2004,
        9,
        17
      ]
    ],
    "date-time": "2004-09-17T22:02:05Z",
    "timestamp": 1095458525000
  },
  "page": "2098-2100",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 218,
  "title": "Ambipolar pentacene field-effect transistors with calcium source-drain electrodes",
  "prefix": "10.1063",
  "volume": "85",
  "author": [
    {
      "given": "Takeshi",
      "family": "Yasuda",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Department of Applied Science for Electronics and Materials, Graduate School of Engineering Sciences, Kyushu University , Kasuga, Fukuoka 816-8580, Japan"
        }
      ]
    },
    {
      "given": "Takeshi",
      "family": "Goto",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Applied Science for Electronics and Materials, Graduate School of Engineering Sciences, Kyushu University , Kasuga, Fukuoka 816-8580, Japan"
        }
      ]
    },
    {
      "given": "Katsuhiko",
      "family": "Fujita",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Applied Science for Electronics and Materials, Graduate School of Engineering Sciences, Kyushu University , Kasuga, Fukuoka 816-8580, Japan"
        }
      ]
    },
    {
      "given": "Tetsuo",
      "family": "Tsutsui",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Applied Science for Electronics and Materials, Graduate School of Engineering Sciences, Kyushu University , Kasuga, Fukuoka 816-8580, Japan"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020403522826700_c1",
      "doi-asserted-by": "publisher",
      "first-page": "4773",
      "DOI": "10.1063/1.1631736",
      "volume": "83",
      "year": "2003",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020403522826700_c2",
      "doi-asserted-by": "publisher",
      "first-page": "5259",
      "DOI": "10.1063/1.1511826",
      "volume": "92",
      "year": "2002",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020403522826700_c3",
      "doi-asserted-by": "publisher",
      "first-page": "873",
      "DOI": "10.1063/1.125614",
      "volume": "76",
      "year": "2000",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020403522826700_c4",
      "doi-asserted-by": "crossref",
      "first-page": "L718",
      "DOI": "10.1143/JJAP.36.L718",
      "volume": "36",
      "year": "1997",
      "journal-title": "Jpn. J. Appl. Phys., Part 2"
    },
    {
      "key": "2024020403522826700_c5",
      "doi-asserted-by": "publisher",
      "first-page": "678",
      "DOI": "10.1038/nmat978",
      "volume": "2",
      "year": "2003",
      "journal-title": "Nat. Mater."
    },
    {
      "key": "2024020403522826700_c6",
      "doi-asserted-by": "publisher",
      "first-page": "1108",
      "DOI": "10.1063/1.115728",
      "volume": "68",
      "year": "1996",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020403522826700_c7",
      "doi-asserted-by": "publisher",
      "first-page": "1278",
      "DOI": "10.1002/adma.200305200",
      "volume": "15",
      "year": "2003",
      "journal-title": "Adv. Mater. (Weinheim, Ger.)"
    },
    {
      "key": "2024020403522826700_c8",
      "volume-title": "Electronic Processes in Organic Crystals and Polymers",
      "year": "1999",
      "edition": "2nd ed."
    },
    {
      "key": "2024020403522826700_c9",
      "doi-asserted-by": "crossref",
      "first-page": "L1275",
      "DOI": "10.1143/JJAP.42.L1275",
      "volume": "42",
      "year": "2003",
      "journal-title": "Jpn. J. Appl. Phys., Part 2"
    },
    {
      "key": "2024020403522826700_c10",
      "doi-asserted-by": "publisher",
      "first-page": "121",
      "DOI": "10.1063/1.115503",
      "volume": "67",
      "year": "1995",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020403522826700_c11",
      "doi-asserted-by": "publisher",
      "first-page": "11331",
      "DOI": "10.1021/ja962461j",
      "volume": "118",
      "year": "1996",
      "journal-title": "J. Am. Chem. Soc."
    },
    {
      "key": "2024020403522826700_c12",
      "doi-asserted-by": "publisher",
      "first-page": "2987",
      "DOI": "10.1063/1.1415374",
      "volume": "79",
      "year": "2001",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020403522826700_c13",
      "doi-asserted-by": "crossref",
      "first-page": "6614",
      "DOI": "10.1143/JJAP.42.6614",
      "volume": "42",
      "year": "2003",
      "journal-title": "Jpn. J. Appl. Phys., Part 1"
    },
    {
      "key": "2024020403522826700_c14",
      "doi-asserted-by": "publisher",
      "first-page": "3061",
      "DOI": "10.1063/1.1704874",
      "volume": "84",
      "year": "2004",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020403522826700_c15",
      "first-page": "413",
      "volume": "413",
      "year": "1996",
      "journal-title": "Mater. Res. Soc. Symp. Proc."
    },
    {
      "key": "2024020403522826700_c16",
      "doi-asserted-by": "publisher",
      "first-page": "4646",
      "DOI": "10.1063/1.1527983",
      "volume": "81",
      "year": "2002",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020403522826700_c17",
      "doi-asserted-by": "publisher",
      "first-page": "4384",
      "DOI": "10.1063/1.1485129",
      "volume": "80",
      "year": "2002",
      "journal-title": "Appl. Phys. Lett."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/85/11/2098/18595076/2098_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/85/11/2098/18595076/2098_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        4
      ]
    ],
    "date-time": "2024-02-04T03:52:35Z",
    "timestamp": 1707018755000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/85/11/2098/932443/Ambipolar-pentacene-field-effect-transistors-with"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2004,
        9,
        13
      ]
    ]
  },
  "references-count": 17,
  "journal-issue": {
    "issue": "11",
    "published-print": {
      "date-parts": [
        [
          2004,
          9,
          13
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.1794375",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2004,
        9,
        13
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2004,
        9,
        13
      ]
    ]
  }
}