DOI: 10.1063/1.1788897. Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films

Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films

10.1063/1.1788897

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We have investigated carrier transport in a crystalline oxide semiconductor InGaO3(ZnO)5 using single-crystalline thin films. When carrier concentration is less than 2×1018cm−3, logarithm of electrical conductivity decreases in proportion to T−1∕4 and room-temperature Hall mobility was as low as ∼1cm2(Vs)−1. When carrier concentration was increased to 4×1018cm−3, the conduction mechanism changed to degenerate conduction and room-temperature Hall mobility was steeply increased to &gt;10cm2(Vs)−1, showing metal–insulator transition behavior. These results are explained by percolation conduction over distribution of potential barriers formed around conduction band edge. The potential distribution is a consequence of potential modulation originating from random distribution of Ga3+ and Zn2+ ions in the crystal structure of InGaO3(ZnO)5.

Bibliography

Nomura, K., Kamiya, T., Ohta, H., Ueda, K., Hirano, M., & Hosono, H. (2004). Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films. Applied Physics Letters, 85(11), 1993â1995.

Authors 6

Kenji Nomura (first)
Toshio Kamiya (additional)
Hiromichi Ohta (additional)
Kazushige Ueda (additional)
Masahiro Hirano (additional)
Hideo Hosono (additional)

References 22 Referenced 260

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10.1063/1.127015 / Appl. Phys. Lett. (2000)
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10.1126/science.1083212 / Science (2003)
10.1002/zaac.19673490302 / Z. Anorg. Allg. Chem. (1967)
10.1006/jssc.1995.1198 / J. Solid State Chem. (1995)
10.1063/1.1655067 / Appl. Phys. Lett. (1973)
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Dates

Type	When
Created	20 years, 11 months ago (Sept. 17, 2004, 6:02 p.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 10:53 p.m.)
Indexed	3 weeks ago (Aug. 6, 2025, 9:09 a.m.)
Issued	20 years, 11 months ago (Sept. 13, 2004)
Published	20 years, 11 months ago (Sept. 13, 2004)
Published Print	20 years, 11 months ago (Sept. 13, 2004)

Funders 0

None

BibTeX

@article{Nomura_2004, title={Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films}, volume={85}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1788897}, DOI={10.1063/1.1788897}, number={11}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Nomura, Kenji and Kamiya, Toshio and Ohta, Hiromichi and Ueda, Kazushige and Hirano, Masahiro and Hosono, Hideo}, year={2004}, month=sep, pages={1993–1995} }

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