DOI: 10.1063/1.1787142. Polytype transition of N-face GaN:Mg from wurtzite to zinc-blende

Polytype transition of N-face GaN:Mg from wurtzite to zinc-blende

10.1063/1.1787142

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

We have investigated the polytype conversion of a GaN film from N-face wurtzite (2H) to zinc-blende (3C) structure due to Mg doping during growth by plasma-assisted molecular-beam epitaxy. Structural analysis by high-resolution transmission electron microscopy and high-resolution x-ray diffraction measurement revealed alignment of the cubic phase with the [111] axis perpendicular to the substrate surface. The optical characteristics of GaN:Mg layers are shown to be very sensitive to the presence of the cubic polytype. For low Mg doping, photoluminescence is dominated by a phonon-replicated donor-acceptor pair at ∼3.25eV, related to the shallow Mg acceptor level, accompanied by a narrow excitonic emission. For high Mg doping, the photoluminescence spectra are also dominated by a line around 3.25eV, but this emission displays the behavior of excitonic luminescence from cubic GaN. A cubic-related donor-acceptor transition at ∼3.16eV is also observed, together with a broad blue band around 2.9eV, previously reported in heavily Mg-doped 3C-GaN(001).

Bibliography

Monroy, E., Hermann, M., Sarigiannidou, E., Andreev, T., Holliger, P., Monnoye, S., Mank, H., Daudin, B., & Eickhoff, M. (2004). Polytype transition of N-face GaN:Mg from wurtzite to zinc-blende. Journal of Applied Physics, 96(7), 3709â3715.

Authors 9

E. Monroy (first)
M. Hermann (additional)
E. Sarigiannidou (additional)
T. Andreev (additional)
P. Holliger (additional)
S. Monnoye (additional)
H. Mank (additional)
B. Daudin (additional)
M. Eickhoff (additional)

References 38 Referenced 18

10.1143/JJAP.28.L2112 / Jpn. J. Appl. Phys., Part 2 (1989)
10.1063/1.371242 / J. Appl. Phys. (1999)
10.1002/pssc.200303121 / Phys. Status Solidi C (2003)
10.1016/S0921-5107(02)00046-6 / Mater. Sci. Eng., B (2002)
10.1103/PhysRevB.67.165419 / Phys. Rev. B (2003)
10.1063/1.1322370 / Appl. Phys. Lett. (2000)
10.1103/PhysRevLett.90.056101 / Phys. Rev. Lett. (2003)
10.1557/S1092578300000296 / MRS Internet J. Nitride Semicond. Res. (2002)
10.1063/1.121293 / Appl. Phys. Lett. (1998)
10.1116/1.590156 / J. Vac. Sci. Technol. B (1998)
10.1103/PhysRevLett.79.3934 / Phys. Rev. Lett. (1997)
10.1063/1.370574 / J. Appl. Phys. (2003)
10.1063/1.1739511 / Appl. Phys. Lett. (2004)
10.1063/1.1705719 / Appl. Phys. Lett. (2004)
{'key': '2024020719081162800_c12', 'first-page': 'W3', 'volume': '5S1', 'year': '2000', 'journal-title': 'MRS Internet J. Nitride Semicond. Res.'} / MRS Internet J. Nitride Semicond. Res. (2000)
10.1063/1.124520 / Appl. Phys. Lett. (1999)
10.1116/1.1589511 / J. Vac. Sci. Technol. B (2003)
10.1016/S0022-0248(02)02361-8 / J. Cryst. Growth (2003)
10.1002/1521-3951(200111)228:2<505::AID-PSSB505>3.0.CO;2-U / Phys. Status Solidi B (2001)
10.1002/sia.1341 / Surf. Interface Anal. (2002)
10.1063/1.1339255 / Appl. Phys. Lett. (2001)
10.1103/PhysRevB.59.9771 / Phys. Rev. B (1999)
10.1063/1.1456243 / J. Appl. Phys. (2002)
10.1002/1521-396X(200007)180:1<403::AID-PSSA403>3.0.CO;2-A / Phys. Status Solidi A (2000)
10.1063/1.1429290 / Appl. Phys. Lett. (2001)
10.1063/1.1586455 / Appl. Phys. Lett. (2003)
10.1063/1.1682673 / J. Appl. Phys. (2004)
10.1063/1.1649819 / Appl. Phys. Lett. (2004)
10.1063/1.119415 / Appl. Phys. Lett. (1997)
10.1116/1.1575214 / J. Vac. Sci. Technol. A (2003)
{'key': '2024020719081162800_c28', 'first-page': '415', 'volume': '189∕190', 'year': '1998', 'journal-title': 'J. Cryst. Growth'} / J. Cryst. Growth (1998)
{'key': '2024020719081162800_c29', 'first-page': 'G3', 'volume': '4S1', 'year': '1999', 'journal-title': 'MRS Internet J. Nitride Semicond. Res.'} / MRS Internet J. Nitride Semicond. Res. (1999)
10.1002/1521-396X(200112)188:2<681::AID-PSSA681>3.0.CO;2-7 / Phys. Status Solidi A (2001)
10.1063/1.370826 / J. Appl. Phys. (1999)
10.1103/PhysRevB.53.1881 / Phys. Rev. B (1996)
10.1063/1.369619 / J. Appl. Phys. (1999)
10.1063/1.122298 / Appl. Phys. Lett. (1998)
10.1016/S0921-5107(00)00719-4 / Mater. Sci. Eng., B (2001)

Dates

Type	When
Created	20 years, 11 months ago (Sept. 27, 2004, 6:03 p.m.)
Deposited	1 year, 6 months ago (Feb. 7, 2024, 7:40 p.m.)
Indexed	1 year, 1 month ago (July 6, 2024, 7:12 p.m.)
Issued	20 years, 11 months ago (Oct. 1, 2004)
Published	20 years, 11 months ago (Oct. 1, 2004)
Published Print	20 years, 11 months ago (Oct. 1, 2004)

Funders 0

None

BibTeX

@article{Monroy_2004, title={Polytype transition of N-face GaN:Mg from wurtzite to zinc-blende}, volume={96}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1787142}, DOI={10.1063/1.1787142}, number={7}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Monroy, E. and Hermann, M. and Sarigiannidou, E. and Andreev, T. and Holliger, P. and Monnoye, S. and Mank, H. and Daudin, B. and Eickhoff, M.}, year={2004}, month=oct, pages={3709–3715} }

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      "URL": "https://pubs.aip.org/jap/article/96/7/3709/930791/Polytype-transition-of-N-face-GaN-Mg-from-wurtzite"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2004,
        10,
        1
      ]
    ]
  },
  "references-count": 38,
  "journal-issue": {
    "issue": "7",
    "published-print": {
      "date-parts": [
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          2004,
          10,
          1
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      ]
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  },
  "URL": "http://dx.doi.org/10.1063/1.1787142",
  "relation": {},
  "ISSN": [
    "0021-8979",
    "1089-7550"
  ],
  "subject": [],
  "published-other": {
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        2004,
        10,
        1
      ]
    ]
  },
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        2004,
        10,
        1
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  }
}