Abstract
We report on measurements of the thermal conductivity of reactively sputtered aluminum nitride (AlN) thin films with different thickness, ranging from 100nm to 1μm, on silicon substrates. The measurements were made at room temperature using the pulsed photothermal reflectance technique. The thermal conductivities of the sample are found to be significantly lower than the single-crystal bulk AlN and increase with an increasing thickness. The thermal resistance at the interface between the AlN film and the silicon substrate is found to be about 7–8×10−8m2K∕W.
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Dates
Type | When |
---|---|
Created | 20 years, 10 months ago (Oct. 4, 2004, 6:18 p.m.) |
Deposited | 1 year, 6 months ago (Feb. 7, 2024, 7:43 p.m.) |
Indexed | 3 weeks, 4 days ago (Aug. 7, 2025, 4:22 p.m.) |
Issued | 20 years, 10 months ago (Oct. 15, 2004) |
Published | 20 years, 10 months ago (Oct. 15, 2004) |
Published Print | 20 years, 10 months ago (Oct. 15, 2004) |
@article{Zhao_2004, title={Pulsed photothermal reflectance measurement of the thermal conductivity of sputtered aluminum nitride thin films}, volume={96}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1785850}, DOI={10.1063/1.1785850}, number={8}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Zhao, Yimin and Zhu, Chunlin and Wang, Sigen and Tian, J. Z. and Yang, D. J. and Chen, C. K. and Cheng, Hao and Hing, Peter}, year={2004}, month=oct, pages={4563–4568} }