Abstract
We demonstrate a light-emitting organic field-effect transistor (OFET) with pronounced ambipolar current characteristics. The ambipolar transport layer is a coevaporated thin film of α-quinquethiophene (α-5T) as hole-transport material and N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13) as electron-transport material. The light intensity is controlled by both the drain–source voltage VDS and the gate voltage VG. Moreover, the latter can be used to adjust the charge-carrier balance. The device structure serves as a model system for ambipolar light-emitting OFETs and demonstrates the general concept of adjusting electron and hole mobilities by coevaporation of two different organic semiconductors.
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Dates
Type | When |
---|---|
Created | 21 years ago (Aug. 27, 2004, 7:40 p.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 10:47 p.m.) |
Indexed | 1 month, 3 weeks ago (July 8, 2025, 3:24 a.m.) |
Issued | 20 years, 11 months ago (Aug. 30, 2004) |
Published | 20 years, 11 months ago (Aug. 30, 2004) |
Published Print | 20 years, 11 months ago (Aug. 30, 2004) |
@article{Rost_2004, title={Ambipolar light-emitting organic field-effect transistor}, volume={85}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1785290}, DOI={10.1063/1.1785290}, number={9}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Rost, Constance and Karg, Siegfried and Riess, Walter and Loi, Maria Antonietta and Murgia, Mauro and Muccini, Michele}, year={2004}, month=aug, pages={1613–1615} }