Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

We demonstrate a light-emitting organic field-effect transistor (OFET) with pronounced ambipolar current characteristics. The ambipolar transport layer is a coevaporated thin film of α-quinquethiophene (α-5T) as hole-transport material and N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13) as electron-transport material. The light intensity is controlled by both the drain–source voltage VDS and the gate voltage VG. Moreover, the latter can be used to adjust the charge-carrier balance. The device structure serves as a model system for ambipolar light-emitting OFETs and demonstrates the general concept of adjusting electron and hole mobilities by coevaporation of two different organic semiconductors.

Bibliography

Rost, C., Karg, S., Riess, W., Loi, M. A., Murgia, M., & Muccini, M. (2004). Ambipolar light-emitting organic field-effect transistor. Applied Physics Letters, 85(9), 1613–1615.

Authors 6
  1. Constance Rost (first)
  2. Siegfried Karg (additional)
  3. Walter Riess (additional)
  4. Maria Antonietta Loi (additional)
  5. Mauro Murgia (additional)
  6. Michele Muccini (additional)
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Dates
Type When
Created 21 years ago (Aug. 27, 2004, 7:40 p.m.)
Deposited 1 year, 6 months ago (Feb. 3, 2024, 10:47 p.m.)
Indexed 1 month, 3 weeks ago (July 8, 2025, 3:24 a.m.)
Issued 20 years, 11 months ago (Aug. 30, 2004)
Published 20 years, 11 months ago (Aug. 30, 2004)
Published Print 20 years, 11 months ago (Aug. 30, 2004)
Funders 0

None

@article{Rost_2004, title={Ambipolar light-emitting organic field-effect transistor}, volume={85}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1785290}, DOI={10.1063/1.1785290}, number={9}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Rost, Constance and Karg, Siegfried and Riess, Walter and Loi, Maria Antonietta and Murgia, Mauro and Muccini, Michele}, year={2004}, month=aug, pages={1613–1615} }