DOI: 10.1063/1.1783016. Hetero-epitaxy of perovskite oxides on GaAs(001) by molecular beam epitaxy

Hetero-epitaxy of perovskite oxides on GaAs(001) by molecular beam epitaxy

10.1063/1.1783016

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Hetero-epitaxy of single-crystal perovskite SrTiO3 on GaAs(001) was achieved using molecular beam epitaxy. The growth was accomplished by deposition of a submonolayer of titanium on GaAs(001), followed by the co-deposition of strontium and titanium initiated at a low-temperature, low-oxygen-pressure condition. X-ray photoelectron spectroscopy showed that the Ti prelayer reacted with As and formed TiAs-like species on the As terminated GaAs(001) surface. Reflection-high-energy-electron diffraction showed that SrTiO3 grew coherently on the GaAs(001) at early stage of growth. This coherent behavior began to degrade when SrTiO3 thickness exceeded 20Å. Cross-sectional transmission electron microscopy revealed an abrupt interface between SrTiO3 and GaAs and good crystallinity of the SrTiO3 film. An epitaxial relationship between SrTiO3 and GaAs was further confirmed by x-ray diffraction. The success of growth of SrTiO3 on GaAs paves the way for integration of various functional perovskite oxides with GaAs.

Bibliography

Liang, Y., Kulik, J., Eschrich, T. C., Droopad, R., Yu, Z., & Maniar, P. (2004). Hetero-epitaxy of perovskite oxides on GaAs(001) by molecular beam epitaxy. Applied Physics Letters, 85(7), 1217â1219.

Authors 6

Y. Liang (first)
J. Kulik (additional)
T. C. Eschrich (additional)
R. Droopad (additional)
Z. Yu (additional)
P. Maniar (additional)

References 13 Referenced 81

10.1126/science.283.5409.1897 / Science (1999)
10.1103/PhysRevLett.81.3014 / Phys. Rev. Lett. (1998)
10.1116/1.591445 / J. Compos. Mater. (2000)
10.1063/1.126023 / Appl. Phys. Lett. (2000)
10.1063/1.1498006 / Appl. Phys. Lett. (2002)
10.1063/1.125730 / Appl. Phys. Lett. (2000)
10.1063/1.352975 / J. Appl. Phys. (1993)
10.1116/1.581413 / J. Vac. Sci. Technol. A (1998)
10.1116/1.1382878 / J. Vac. Sci. Technol. A (2001)
10.1116/1.1339017 / J. Vac. Sci. Technol. A (2001)
{'key': '2024020403413085600_c11', 'volume-title': 'J. Appl. Phys.'} / J. Appl. Phys.
10.1116/1.575727 / J. Vac. Sci. Technol. A (1988)
{'key': '2024020403413085600_c13', 'first-page': '147', 'year': '2003'} (2003)

Dates

Type	When
Created	21 years ago (Aug. 10, 2004, 6:58 p.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 10:41 p.m.)
Indexed	2 months, 3 weeks ago (May 29, 2025, 3:45 a.m.)
Issued	21 years ago (Aug. 16, 2004)
Published	21 years ago (Aug. 16, 2004)
Published Print	21 years ago (Aug. 16, 2004)

Funders 0

None

BibTeX

@article{Liang_2004, title={Hetero-epitaxy of perovskite oxides on GaAs(001) by molecular beam epitaxy}, volume={85}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1783016}, DOI={10.1063/1.1783016}, number={7}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Liang, Y. and Kulik, J. and Eschrich, T. C. and Droopad, R. and Yu, Z. and Maniar, P.}, year={2004}, month=aug, pages={1217–1219} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        5,
        29
      ]
    ],
    "date-time": "2025-05-29T07:45:10Z",
    "timestamp": 1748504710718
  },
  "reference-count": 13,
  "publisher": "AIP Publishing",
  "issue": "7",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2004,
        8,
        16
      ]
    ]
  },
  "abstract": "<jats:p>Hetero-epitaxy of single-crystal perovskite SrTiO3 on GaAs(001) was achieved using molecular beam epitaxy. The growth was accomplished by deposition of a submonolayer of titanium on GaAs(001), followed by the co-deposition of strontium and titanium initiated at a low-temperature, low-oxygen-pressure condition. X-ray photoelectron spectroscopy showed that the Ti prelayer reacted with As and formed TiAs-like species on the As terminated GaAs(001) surface. Reflection-high-energy-electron diffraction showed that SrTiO3 grew coherently on the GaAs(001) at early stage of growth. This coherent behavior began to degrade when SrTiO3 thickness exceeded 20\u00c5. Cross-sectional transmission electron microscopy revealed an abrupt interface between SrTiO3 and GaAs and good crystallinity of the SrTiO3 film. An epitaxial relationship between SrTiO3 and GaAs was further confirmed by x-ray diffraction. The success of growth of SrTiO3 on GaAs paves the way for integration of various functional perovskite oxides with GaAs.</jats:p>",
  "DOI": "10.1063/1.1783016",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2004,
        8,
        10
      ]
    ],
    "date-time": "2004-08-10T22:58:26Z",
    "timestamp": 1092178706000
  },
  "page": "1217-1219",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 81,
  "title": "Hetero-epitaxy of perovskite oxides on GaAs(001) by molecular beam epitaxy",
  "prefix": "10.1063",
  "volume": "85",
  "author": [
    {
      "given": "Y.",
      "family": "Liang",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Microelectronics and Physical Sciences Laboratory , , and , Motorola Inc., 2100 East Elliot Road, Tempe, Arizona 85284"
        },
        {
          "name": "Process and Materials Characterization Laboratory , , and , Motorola Inc., 2100 East Elliot Road, Tempe, Arizona 85284"
        },
        {
          "name": "Microelectronics and Physical Sciences Laboratory , , and , Motorola Inc., 2100 East Elliot Road, Tempe, Arizona 85284"
        }
      ]
    },
    {
      "given": "J.",
      "family": "Kulik",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Microelectronics and Physical Sciences Laboratory , , and , Motorola Inc., 2100 East Elliot Road, Tempe, Arizona 85284"
        },
        {
          "name": "Process and Materials Characterization Laboratory , , and , Motorola Inc., 2100 East Elliot Road, Tempe, Arizona 85284"
        },
        {
          "name": "Microelectronics and Physical Sciences Laboratory , , and , Motorola Inc., 2100 East Elliot Road, Tempe, Arizona 85284"
        }
      ]
    },
    {
      "given": "T. C.",
      "family": "Eschrich",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Microelectronics and Physical Sciences Laboratory , , and , Motorola Inc., 2100 East Elliot Road, Tempe, Arizona 85284"
        },
        {
          "name": "Process and Materials Characterization Laboratory , , and , Motorola Inc., 2100 East Elliot Road, Tempe, Arizona 85284"
        },
        {
          "name": "Microelectronics and Physical Sciences Laboratory , , and , Motorola Inc., 2100 East Elliot Road, Tempe, Arizona 85284"
        }
      ]
    },
    {
      "given": "R.",
      "family": "Droopad",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Microelectronics and Physical Sciences Laboratory , , and , Motorola Inc., 2100 East Elliot Road, Tempe, Arizona 85284"
        },
        {
          "name": "Process and Materials Characterization Laboratory , , and , Motorola Inc., 2100 East Elliot Road, Tempe, Arizona 85284"
        },
        {
          "name": "Microelectronics and Physical Sciences Laboratory , , and , Motorola Inc., 2100 East Elliot Road, Tempe, Arizona 85284"
        }
      ]
    },
    {
      "given": "Z.",
      "family": "Yu",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Microelectronics and Physical Sciences Laboratory , , and , Motorola Inc., 2100 East Elliot Road, Tempe, Arizona 85284"
        },
        {
          "name": "Process and Materials Characterization Laboratory , , and , Motorola Inc., 2100 East Elliot Road, Tempe, Arizona 85284"
        },
        {
          "name": "Microelectronics and Physical Sciences Laboratory , , and , Motorola Inc., 2100 East Elliot Road, Tempe, Arizona 85284"
        }
      ]
    },
    {
      "given": "P.",
      "family": "Maniar",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Microelectronics and Physical Sciences Laboratory , , and , Motorola Inc., 2100 East Elliot Road, Tempe, Arizona 85284"
        },
        {
          "name": "Process and Materials Characterization Laboratory , , and , Motorola Inc., 2100 East Elliot Road, Tempe, Arizona 85284"
        },
        {
          "name": "Microelectronics and Physical Sciences Laboratory , , and , Motorola Inc., 2100 East Elliot Road, Tempe, Arizona 85284"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020403413085600_c1",
      "doi-asserted-by": "publisher",
      "first-page": "1897",
      "DOI": "10.1126/science.283.5409.1897",
      "volume": "283",
      "year": "1999",
      "journal-title": "Science"
    },
    {
      "key": "2024020403413085600_c2",
      "doi-asserted-by": "publisher",
      "first-page": "3014",
      "DOI": "10.1103/PhysRevLett.81.3014",
      "volume": "81",
      "year": "1998",
      "journal-title": "Phys. Rev. Lett."
    },
    {
      "key": "2024020403413085600_c3",
      "doi-asserted-by": "publisher",
      "first-page": "1653",
      "DOI": "10.1116/1.591445",
      "volume": "18",
      "year": "2000",
      "journal-title": "J. Compos. Mater."
    },
    {
      "key": "2024020403413085600_c4",
      "doi-asserted-by": "publisher",
      "first-page": "1324",
      "DOI": "10.1063/1.126023",
      "volume": "76",
      "year": "2000",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020403413085600_c5",
      "doi-asserted-by": "publisher",
      "first-page": "1062",
      "DOI": "10.1063/1.1498006",
      "volume": "81",
      "year": "2002",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020403413085600_c6",
      "doi-asserted-by": "publisher",
      "first-page": "312",
      "DOI": "10.1063/1.125730",
      "volume": "76",
      "year": "2000",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020403413085600_c7",
      "doi-asserted-by": "publisher",
      "first-page": "3276",
      "DOI": "10.1063/1.352975",
      "volume": "73",
      "year": "1993",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020403413085600_c8",
      "doi-asserted-by": "publisher",
      "first-page": "2423",
      "DOI": "10.1116/1.581413",
      "volume": "16",
      "year": "1998",
      "journal-title": "J. Vac. Sci. Technol. A"
    },
    {
      "key": "2024020403413085600_c9",
      "doi-asserted-by": "publisher",
      "first-page": "2282",
      "DOI": "10.1116/1.1382878",
      "volume": "19",
      "year": "2001",
      "journal-title": "J. Vac. Sci. Technol. A"
    },
    {
      "key": "2024020403413085600_c10",
      "doi-asserted-by": "publisher",
      "first-page": "391",
      "DOI": "10.1116/1.1339017",
      "volume": "19",
      "year": "2001",
      "journal-title": "J. Vac. Sci. Technol. A"
    },
    {
      "key": "2024020403413085600_c11",
      "volume-title": "J. Appl. Phys."
    },
    {
      "key": "2024020403413085600_c12",
      "doi-asserted-by": "publisher",
      "first-page": "1466",
      "DOI": "10.1116/1.575727",
      "volume": "6",
      "year": "1988",
      "journal-title": "J. Vac. Sci. Technol. A"
    },
    {
      "key": "2024020403413085600_c13",
      "first-page": "147",
      "year": "2003"
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/85/7/1217/18592959/1217_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/85/7/1217/18592959/1217_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        4
      ]
    ],
    "date-time": "2024-02-04T03:41:38Z",
    "timestamp": 1707018098000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/85/7/1217/116858/Hetero-epitaxy-of-perovskite-oxides-on-GaAs-001-by"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2004,
        8,
        16
      ]
    ]
  },
  "references-count": 13,
  "journal-issue": {
    "issue": "7",
    "published-print": {
      "date-parts": [
        [
          2004,
          8,
          16
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.1783016",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2004,
        8,
        16
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2004,
        8,
        16
      ]
    ]
  }
}