Abstract
This letter presents the optoelectrical performance of an organic light-emitting diode (OLED) through the elevation of indium tin oxide (ITO) anode work function by Ni co-sputter surface doping and additional O2 plasma treatment. The turn-on voltage of OLED devices can be reduced by 2.3V for Ni atomic concentration greater than 1.8% and by 2.7V for the additional O2 plasma treatment. Devices with Ni(2.6%)-doped and O2 plasma treated ITO anodes perform the highest luminance efficiency (0.91lm∕W), three times larger than undoped ITO (0.31lm∕W) at 250cd∕m2.
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Dates
Type | When |
---|---|
Created | 21 years, 1 month ago (July 27, 2004, 6:12 p.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 10:39 p.m.) |
Indexed | 1 year, 1 month ago (July 5, 2024, 5:21 p.m.) |
Issued | 21 years, 1 month ago (Aug. 2, 2004) |
Published | 21 years, 1 month ago (Aug. 2, 2004) |
Published Print | 21 years, 1 month ago (Aug. 2, 2004) |
@article{Hsu_2004, title={Improved characteristics of organic light-emitting devicesby surface modification of nickel-doped indium tin oxide anode}, volume={85}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1777416}, DOI={10.1063/1.1777416}, number={5}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Hsu, Ching-Ming and Wu, Wen-Tuan}, year={2004}, month=aug, pages={840–842} }