DOI: 10.1063/1.1776636. Engineering chemically abrupt high-k metal oxide∕silicon interfaces using an oxygen-gettering metal overlayer

Engineering chemically abrupt high-k metal oxide∕silicon interfaces using an oxygen-gettering metal overlayer

10.1063/1.1776636

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

High-k metal oxide gate dielectrics may be required to extend Moore’s law of semiconductor device density scaling into the future. However, growth of a thin SiO2-containing interface layer is almost unavoidable during the deposition of metal oxide films onto Si substrates. This limits the scaling benefits of incorporating high-k dielectrics in future transistors. A promising approach, in which oxygen-gettering metal overlayers are used to engineer the thickness of the SiO2-based interface layer between metal oxide and Si substrate after deposition of the metal oxide layer, is reported. Using a Ti overlayer with high solubility for oxygen on ZrO2 or HfO2 dielectrics, the effective removal of the low-k interface layer at 300K has been confirmed by electron microscopy and spectroscopy techniques. Significant enhancement of the gate capacitance density, while retaining low leakage current densities, has also been demonstrated for these interface-engineered high-k gate stacks.

Bibliography

Kim, H., McIntyre, P. C., On Chui, C., Saraswat, K. C., & Stemmer, S. (2004). Engineering chemically abrupt high-k metal oxideâsilicon interfaces using an oxygen-gettering metal overlayer. Journal of Applied Physics, 96(6), 3467â3472.

Authors 5

Hyoungsub Kim (first)
Paul C. McIntyre (additional)
Chi On Chui (additional)
Krishna C. Saraswat (additional)
Susanne Stemmer (additional)

References 24 Referenced 184

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{'key': '2024020716571643900_c6', 'volume-title': 'MOS (Metal Oxide Semiconductor) Physics and Technology', 'year': '2003'} / MOS (Metal Oxide Semiconductor) Physics and Technology (2003)
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{'key': '2024020716571643900_c12', 'volume-title': 'Thermochemical Properties of Inorganic Substances', 'year': '1977'} / Thermochemical Properties of Inorganic Substances (1977)
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Dates

Type	When
Created	21 years ago (Sept. 2, 2004, 6:09 p.m.)
Deposited	1 year, 6 months ago (Feb. 7, 2024, 5:55 p.m.)
Indexed	1 hour ago (Sept. 3, 2025, 2:08 a.m.)
Issued	20 years, 11 months ago (Sept. 15, 2004)
Published	20 years, 11 months ago (Sept. 15, 2004)
Published Print	20 years, 11 months ago (Sept. 15, 2004)

Funders 0

None

BibTeX

@article{Kim_2004, title={Engineering chemically abrupt high-k metal oxide‚àïsilicon interfaces using an oxygen-gettering metal overlayer}, volume={96}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1776636}, DOI={10.1063/1.1776636}, number={6}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Kim, Hyoungsub and McIntyre, Paul C. and On Chui, Chi and Saraswat, Krishna C. and Stemmer, Susanne}, year={2004}, month=sep, pages={3467‚Äì3472} }

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