DOI: 10.1063/1.1771452. Physical origin of trench formation in Ge∕Si(100) islands

Physical origin of trench formation in Ge∕Si(100) islands

10.1063/1.1771452

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Monte Carlo simulations of stress buildup and relief shed light onto the physical origin of trench formation in Ge∕Si(100) islands. By monitoring the stress evolution as the island grows layer by layer, we find that a trench is most likely being formed halfway during growth. The primary driving force for this phenomenon is the reduction of the concentrated stress below the edges of the island, but not the need to provide Si into it, as is widely believed. However, once the trench is formed, subsequent intermixing through it is enhanced, and nearly compensates for the stress in the island.

Bibliography

Sonnet, Ph., & Kelires, P. C. (2004). Physical origin of trench formation in GeâSi(100) islands. Applied Physics Letters, 85(2), 203â205.

Authors 2

Ph. Sonnet (first)
P. C. Kelires (additional)

References 18 Referenced 34

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Dates

Type	When
Created	21 years, 1 month ago (July 8, 2004, 6:51 p.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 10:31 p.m.)
Indexed	1 year, 1 month ago (July 5, 2024, 7:34 p.m.)
Issued	21 years, 1 month ago (July 12, 2004)
Published	21 years, 1 month ago (July 12, 2004)
Published Print	21 years, 1 month ago (July 12, 2004)

Funders 0

None

BibTeX

@article{Sonnet_2004, title={Physical origin of trench formation in Ge∕Si(100) islands}, volume={85}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1771452}, DOI={10.1063/1.1771452}, number={2}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Sonnet, Ph. and Kelires, P. C.}, year={2004}, month=jul, pages={203–205} }

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