DOI: 10.1063/1.1769081. Interface states and depletion-induced threshold voltage instabilityin organic metal-insulator-semiconductor structures

Interface states and depletion-induced threshold voltage instabilityin organic metal-insulator-semiconductor structures

10.1063/1.1769081

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We present results obtained from a study of the admittance of metal-insulator-semiconductor capacitors formed from regioregular poly(3-hexylthiophene). Data obtained over a range of applied bias and frequency can be explained by the presence of a distribution of trapping states at the insulator∕semiconductor interface as observed in metal-oxide-silicon capacitors. We also observe a depletion-bias instability in the threshold voltage, VT, that is consistent with negative charge trapping at the insulator∕polymer interface. The shift can be relaxed by illumination with bandgap light, λ=550nm, suggesting that the instability arises from an electronic process.

Bibliography

Torres, I., Taylor, D. M., & Itoh, E. (2004). Interface states and depletion-induced threshold voltage instabilityin organic metal-insulator-semiconductor structures. Applied Physics Letters, 85(2), 314â316.

Authors 3

I. Torres (first)
D. M. Taylor (additional)
E. Itoh (additional)

References 15 Referenced 89

10.1063/1.1525068 / J. Appl. Phys. (2003)
10.1063/1.1581352 / J. Appl. Phys. (2003)
10.1103/PhysRevB.68.085316 / Phys. Rev. B (2003)
10.1016/S0379-6779(98)01162-X / Synth. Met. (1999)
10.1063/1.1394718 / Appl. Phys. Lett. (2001)
10.1063/1.369661 / J. Appl. Phys. (1999)
10.1063/1.1427136 / J. Appl. Phys. (2002)
10.1088/0022-3727/24/11/019 / J. Phys. D (1991)
10.1063/1.1378803 / Appl. Phys. Lett. (2001)
{'key': '2024020403343582200_c10', 'first-page': '2554', 'volume': '91', 'year': '1995', 'journal-title': 'J. Phys. D'} / J. Phys. D (1995)
10.1016/S0379-6779(03)00205-4 / Synth. Met. (2003)
10.1063/1.1454188 / J. Appl. Phys. (2002)
10.1002/j.1538-7305.1967.tb01727.x / Bell Syst. Tech. J. (1967)
10.1063/1.1486253 / J. Appl. Phys. (2002)
{'key': '2024020403343582200_c15', 'volume-title': 'Physics of Semiconductor Devices', 'year': '1981', 'edition': '2nd ed.'} / Physics of Semiconductor Devices (1981)

Dates

Type	When
Created	21 years, 1 month ago (July 8, 2004, 6:51 p.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 10:34 p.m.)
Indexed	4 months, 2 weeks ago (April 16, 2025, 2:13 a.m.)
Issued	21 years, 1 month ago (July 12, 2004)
Published	21 years, 1 month ago (July 12, 2004)
Published Print	21 years, 1 month ago (July 12, 2004)

Funders 0

None

BibTeX

@article{Torres_2004, title={Interface states and depletion-induced threshold voltage instabilityin organic metal-insulator-semiconductor structures}, volume={85}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1769081}, DOI={10.1063/1.1769081}, number={2}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Torres, I. and Taylor, D. M. and Itoh, E.}, year={2004}, month=jul, pages={314–316} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        4,
        16
      ]
    ],
    "date-time": "2025-04-16T06:13:45Z",
    "timestamp": 1744784025578
  },
  "reference-count": 15,
  "publisher": "AIP Publishing",
  "issue": "2",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2004,
        7,
        12
      ]
    ]
  },
  "abstract": "<jats:p>We present results obtained from a study of the admittance of metal-insulator-semiconductor capacitors formed from regioregular poly(3-hexylthiophene). Data obtained over a range of applied bias and frequency can be explained by the presence of a distribution of trapping states at the insulator\u2215semiconductor interface as observed in metal-oxide-silicon capacitors. We also observe a depletion-bias instability in the threshold voltage, VT, that is consistent with negative charge trapping at the insulator\u2215polymer interface. The shift can be relaxed by illumination with bandgap light, \u03bb=550nm, suggesting that the instability arises from an electronic process.</jats:p>",
  "DOI": "10.1063/1.1769081",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2004,
        7,
        8
      ]
    ],
    "date-time": "2004-07-08T22:51:20Z",
    "timestamp": 1089327080000
  },
  "page": "314-316",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 89,
  "title": "Interface states and depletion-induced threshold voltage instabilityin organic metal-insulator-semiconductor structures",
  "prefix": "10.1063",
  "volume": "85",
  "author": [
    {
      "given": "I.",
      "family": "Torres",
      "sequence": "first",
      "affiliation": [
        {
          "name": "School of Informatics , University of Wales, Dean Street, Bangor, Gwynedd LL57 1UT, United Kingdom"
        }
      ]
    },
    {
      "given": "D. M.",
      "family": "Taylor",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "School of Informatics , University of Wales, Dean Street, Bangor, Gwynedd LL57 1UT, United Kingdom"
        }
      ]
    },
    {
      "given": "E.",
      "family": "Itoh",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "School of Informatics , University of Wales, Dean Street, Bangor, Gwynedd LL57 1UT, United Kingdom"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020403343582200_c1",
      "doi-asserted-by": "publisher",
      "first-page": "347",
      "DOI": "10.1063/1.1525068",
      "volume": "93",
      "year": "2003",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020403343582200_c2",
      "doi-asserted-by": "publisher",
      "first-page": "471",
      "DOI": "10.1063/1.1581352",
      "volume": "94",
      "year": "2003",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020403343582200_c3",
      "doi-asserted-by": "publisher",
      "first-page": "085316",
      "DOI": "10.1103/PhysRevB.68.085316",
      "volume": "68",
      "year": "2003",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2024020403343582200_c4",
      "doi-asserted-by": "publisher",
      "first-page": "998",
      "DOI": "10.1016/S0379-6779(98)01162-X",
      "volume": "102",
      "year": "1999",
      "journal-title": "Synth. Met."
    },
    {
      "key": "2024020403343582200_c5",
      "doi-asserted-by": "publisher",
      "first-page": "1124",
      "DOI": "10.1063/1.1394718",
      "volume": "79",
      "year": "2001",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020403343582200_c6",
      "doi-asserted-by": "publisher",
      "first-page": "3202",
      "DOI": "10.1063/1.369661",
      "volume": "85",
      "year": "1999",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020403343582200_c7",
      "doi-asserted-by": "publisher",
      "first-page": "1572",
      "DOI": "10.1063/1.1427136",
      "volume": "91",
      "year": "2002",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020403343582200_c8",
      "doi-asserted-by": "publisher",
      "first-page": "2032",
      "DOI": "10.1088/0022-3727/24/11/019",
      "volume": "24",
      "year": "1991",
      "journal-title": "J. Phys. D"
    },
    {
      "key": "2024020403343582200_c9",
      "doi-asserted-by": "publisher",
      "first-page": "3902",
      "DOI": "10.1063/1.1378803",
      "volume": "78",
      "year": "2001",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020403343582200_c10",
      "first-page": "2554",
      "volume": "91",
      "year": "1995",
      "journal-title": "J. Phys. D"
    },
    {
      "key": "2024020403343582200_c11",
      "doi-asserted-by": "publisher",
      "first-page": "501",
      "DOI": "10.1016/S0379-6779(03)00205-4",
      "volume": "139",
      "year": "2003",
      "journal-title": "Synth. Met."
    },
    {
      "key": "2024020403343582200_c12",
      "doi-asserted-by": "publisher",
      "first-page": "5182",
      "DOI": "10.1063/1.1454188",
      "volume": "91",
      "year": "2002",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020403343582200_c13",
      "doi-asserted-by": "crossref",
      "first-page": "1055",
      "DOI": "10.1002/j.1538-7305.1967.tb01727.x",
      "volume": "46",
      "year": "1967",
      "journal-title": "Bell Syst. Tech. J."
    },
    {
      "key": "2024020403343582200_c14",
      "doi-asserted-by": "publisher",
      "first-page": "330",
      "DOI": "10.1063/1.1486253",
      "volume": "92",
      "year": "2002",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020403343582200_c15",
      "volume-title": "Physics of Semiconductor Devices",
      "year": "1981",
      "edition": "2nd ed."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/85/2/314/18591682/314_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/85/2/314/18591682/314_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        4
      ]
    ],
    "date-time": "2024-02-04T03:34:43Z",
    "timestamp": 1707017683000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/85/2/314/912223/Interface-states-and-depletion-induced-threshold"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2004,
        7,
        12
      ]
    ]
  },
  "references-count": 15,
  "journal-issue": {
    "issue": "2",
    "published-print": {
      "date-parts": [
        [
          2004,
          7,
          12
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.1769081",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2004,
        7,
        12
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2004,
        7,
        12
      ]
    ]
  }
}