DOI: 10.1063/1.1763222. Organic nonvolatile memory by controlling the dynamic copper-ion concentration within organic layer

Organic nonvolatile memory by controlling the dynamic copper-ion concentration within organic layer

10.1063/1.1763222

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Copper (Cu) migration into semiconductor materials like silicon is a well-known and troublesome phenomenon often causing adverse effect on devices. Generally a diffusion barrier layer is added to prevent Cu metallization. We demonstrate an organic nonvolatile memory device by controlling the Cu-ion (Cu+) concentration within the organic layer. When the Cu+ concentration is high enough, the device exhibits a high conductive state due to the metallization effect. When the Cu+ concentration is low, the device displays a low conductance state. These two states differ in their electrical conductivity by more than seven orders of magnitude and can be precisely switched by controlling the Cu+ concentration through the application of external biases. The retention time of both states can be more than several months, and the device is promising for flash memory application. Discussions about the device operation mechanism are provided.

Bibliography

Ma, L., Xu, Q., & Yang, Y. (2004). Organic nonvolatile memory by controlling the dynamic copper-ion concentration within organic layer. Applied Physics Letters, 84(24), 4908â4910.

Authors 3

Liping Ma (first)
Qianfei Xu (additional)
Yang Yang (additional)

References 19 Referenced 117

{'key': '2024020403232573000_r1'}
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{'key': '2024020403232573000_r4'}
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{'key': '2024020403232573000_r6'}
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Dates

Type	When
Created	21 years, 3 months ago (June 1, 2004, 6:03 p.m.)
Deposited	1 year, 7 months ago (Feb. 3, 2024, 10:23 p.m.)
Indexed	29 minutes ago (Sept. 6, 2025, 1:13 p.m.)
Issued	21 years, 2 months ago (June 14, 2004)
Published	21 years, 2 months ago (June 14, 2004)
Published Print	21 years, 2 months ago (June 14, 2004)

Funders 0

None

BibTeX

@article{Ma_2004, title={Organic nonvolatile memory by controlling the dynamic copper-ion concentration within organic layer}, volume={84}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1763222}, DOI={10.1063/1.1763222}, number={24}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Ma, Liping and Xu, Qianfei and Yang, Yang}, year={2004}, month=jun, pages={4908–4910} }

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