DOI: 10.1063/1.1762701. Silicon nanowhiskers grown on 〈111〉Si substrates by molecular-beam epitaxy

Silicon nanowhiskers grown on 〈111〉Si substrates by molecular-beam epitaxy

10.1063/1.1762701

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Silicon nanowhiskers in the diameter range of 70 to 200 nm were grown on 〈111〉-oriented silicon substrates by molecular-beam epitaxy. Assuming the so-called “vapor–liquid–solid” (VLS) growth process to operate, we initiated the growth by using small clusters of gold at the silicon interface as seeds. The in situ generation of the Au clusters as well as the growth parameters of the whiskers are discussed. The experimentally observed radius dependence of the growth velocity of the nanowhiskers is opposite to what is known for VLS growth based on chemical vapor deposition and can be explained by an ad-atom diffusion on the surface of the whiskers.

Bibliography

Schubert, L., Werner, P., Zakharov, N. D., Gerth, G., Kolb, F. M., Long, L., GÃ¶sele, U., & Tan, T. Y. (2004). Silicon nanowhiskers grown on ã111ãSi substrates by molecular-beam epitaxy. Applied Physics Letters, 84(24), 4968â4970.

Authors 8

L. Schubert (first)
P. Werner (additional)
N. D. Zakharov (additional)
G. Gerth (additional)
F. M. Kolb (additional)
L. Long (additional)
U. Gösele (additional)
T. Y. Tan (additional)

References 17 Referenced 290

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{'key': '2024020403242693500_r4', 'first-page': '128', 'volume': '28', 'year': '2003', 'journal-title': 'Mater. Res. Bull.'} / Mater. Res. Bull. (2003)
10.1063/1.1713143 / J. Appl. Phys. (1964)
{'key': '2024020403242693500_r6', 'first-page': '1053', 'volume': '233', 'year': '1965', 'journal-title': 'Trans. Metall. Soc. AIME'} / Trans. Metall. Soc. AIME (1965)
10.1016/0022-0248(75)90105-0 / J. Cryst. Growth (1975)
10.1063/1.1363692 / Appl. Phys. Lett. (2001)
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{'key': '2024020403242693500_r13', 'first-page': '2452', 'volume': '81', 'year': '2002', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. (2002)
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{'key': '2024020403242693500_r17', 'first-page': '22', 'volume': '6', 'year': '2003', 'journal-title': 'Mater. Today'} / Mater. Today (2003)

Dates

Type	When
Created	21 years, 2 months ago (June 1, 2004, 6:03 p.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 10:24 p.m.)
Indexed	1 month, 2 weeks ago (July 2, 2025, 2:11 p.m.)
Issued	21 years, 2 months ago (June 14, 2004)
Published	21 years, 2 months ago (June 14, 2004)
Published Print	21 years, 2 months ago (June 14, 2004)

Funders 0

None

BibTeX

@article{Schubert_2004, title={Silicon nanowhiskers grown on 〈111〉Si substrates by molecular-beam epitaxy}, volume={84}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1762701}, DOI={10.1063/1.1762701}, number={24}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Schubert, L. and Werner, P. and Zakharov, N. D. and Gerth, G. and Kolb, F. M. and Long, L. and Gösele, U. and Tan, T. Y.}, year={2004}, month=jun, pages={4968–4970} }

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