DOI: 10.1063/1.1762692. The influence of the annealing sequence on p+/n junctions observed by scanning capacitance microscopy

The influence of the annealing sequence on p+/n junctions observed by scanning capacitance microscopy

10.1063/1.1762692

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

This letter reports on the investigation of p+–n junction variation produced by various annealing sequences. With well-controlled photoperturbation, we have employed scanning capacitance microscopy to directly observe the junction narrowing induced by post-spike furnace annealing. For p+–n junctions, it is revealed that post-spike furnace annealing may degrade the electrical activation of boron atoms, leading to junction narrowing without significant boron diffusion. The mechanism and the stability of electrical junctions formed by spike annealing are also discussed. The experimental results also clearly show that furnace annealing followed by spike annealing can result in junction broadening with a more concentrated boron profile.

Bibliography

Chang, M. N., Chen, C. Y., Wan, W. W., & Liang, J. H. (2004). The influence of the annealing sequence on p+/n junctions observed by scanning capacitance microscopy. Applied Physics Letters, 84(23), 4705â4707.

Authors 4

M. N. Chang (first)
C. Y. Chen (additional)
W. W. Wan (additional)
J. H. Liang (additional)

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{'key': '2024020403153536900_r12', 'first-page': '357', 'volume': '61', 'year': '1995', 'journal-title': 'Appl. Phys. A: Mater. Sci. Process.'} / Appl. Phys. A: Mater. Sci. Process. (1995)
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Dates

Type	When
Created	21 years, 2 months ago (May 21, 2004, 9:30 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 10:15 p.m.)
Indexed	1 year, 2 months ago (May 31, 2024, 2:36 a.m.)
Issued	21 years, 2 months ago (June 7, 2004)
Published	21 years, 2 months ago (June 7, 2004)
Published Print	21 years, 2 months ago (June 7, 2004)

Funders 0

None

BibTeX

@article{Chang_2004, title={The influence of the annealing sequence on p+/n junctions observed by scanning capacitance microscopy}, volume={84}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1762692}, DOI={10.1063/1.1762692}, number={23}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Chang, M. N. and Chen, C. Y. and Wan, W. W. and Liang, J. H.}, year={2004}, month=jun, pages={4705–4707} }

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