Abstract
The effect of localized uniaxial force (exerted by a hemispherical stylus) on the voltage-current relationship of Au-KTaO3 Schottky barrier diodes is described. Pronounced reversible changes were observed and characterized by stress-induced decreases of up to 0.8 eV in the metal-semiconductor barrier height. The observed diode n values [n ≡ (q/kT)(dV/d ln J)] at 300°K ranged from 1.05 to 1.10. This indicates that thermionic field emission may be the dominant current flow mechanism. An analysis of the pressure profile produced by the stylus yields 4 × 10−11 V-cm2/dyn for the pressure sensitivity of the barrier height.
References
14
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Dates
Type | When |
---|---|
Created | 20 years, 6 months ago (March 1, 2005, 12:50 p.m.) |
Deposited | 1 year, 7 months ago (Feb. 5, 2024, 1:24 a.m.) |
Indexed | 1 year, 7 months ago (Feb. 5, 2024, 1:40 a.m.) |
Issued | 58 years, 3 months ago (June 1, 1967) |
Published | 58 years, 3 months ago (June 1, 1967) |
Published Print | 58 years, 3 months ago (June 1, 1967) |
@article{Rideout_1967, title={PRESSURE SENSITIVITY OF GOLD-POTASSIUM TANTALATE SCHOTTKY BARRIER DIODES}, volume={10}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1754832}, DOI={10.1063/1.1754832}, number={11}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Rideout, V. L. and Crowell, C. R.}, year={1967}, month=jun, pages={329–332} }