DOI: 10.1063/1.1754830. ANALYSIS OF Sb-IMPLANTED SILICON BY (<i>p, p</i>) SCATTERING AND HALL MEASUREMENTS

ANALYSIS OF Sb-IMPLANTED SILICON BY (p, p) SCATTERING AND HALL MEASUREMENTS

10.1063/1.1754830

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The annealing behavior of Si crystals, implanted with ∼1015 Sb ions/cm2 at 40 keV, has been studied by observing the orientation dependence of the scattering yield of 1.0-MeV protons and also by electrical measurements. The scattering measurements provide information on the sites of the implanted atoms and on the extent of lattice disorder. After a room temperature implant, the lattice is heavily damaged, with the Sb occupying random (or interstitial) positions. After annealing at 650°C, ∼75% of the Sb is substitutional with very little damage remaining. Comparable results are obtained in a 400°C implant.

Bibliography

Eriksson, L., Davies, J. A., Denhartog, J., Mayer, J. W., Marsh, O. J., & Markarious, R. (1967). ANALYSIS OF Sb-IMPLANTED SILICON BY (p, p) SCATTERING AND HALL MEASUREMENTS. Applied Physics Letters, 10(11), 323â325.

Authors 6

L. Eriksson (first)
J. A. Davies (additional)
J. Denhartog (additional)
J. W. Mayer (additional)
O. J. Marsh (additional)
R. Markarious (additional)

References 8 Referenced 26

10.1016/0029-554X(65)90141-2 / Nuclear Instr. and Meth. (1965)
{'key': '2024020506233650100_r2'}
10.1063/1.1709416 / J. Appl. Phys. (1967)
10.1139/p64-100 / Can. J. Phys. (1964)
{'issue': '14', 'key': '2024020506233650100_r4', 'volume': '34', 'year': '1965', 'journal-title': 'Mat. Fys. Medd. Dan. Vid. Selsk.'} / Mat. Fys. Medd. Dan. Vid. Selsk. (1965)
10.1063/1.1708867 / J. Appl. Phys. (1966)
10.1080/14786436508228668 / Phil. Mag. (1965)
{'key': '2024020506233650100_r7'}

Dates

Type	When
Created	20 years, 6 months ago (March 1, 2005, 12:50 p.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 1:23 a.m.)
Indexed	2 months ago (July 2, 2025, 10:55 a.m.)
Issued	58 years, 3 months ago (June 1, 1967)
Published	58 years, 3 months ago (June 1, 1967)
Published Print	58 years, 3 months ago (June 1, 1967)

Funders 0

None

BibTeX

@article{Eriksson_1967, title={ANALYSIS OF Sb-IMPLANTED SILICON BY (p, p) SCATTERING AND HALL MEASUREMENTS}, volume={10}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1754830}, DOI={10.1063/1.1754830}, number={11}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Eriksson, L. and Davies, J. A. and Denhartog, J. and Mayer, J. W. and Marsh, O. J. and Markarious, R.}, year={1967}, month=jun, pages={323–325} }

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