DOI: 10.1063/1.1754779. EFFECT OF SURFACE STATES ON ELECTRON MOBILITY IN SILICON SURFACE-INVERSION LAYERS

EFFECT OF SURFACE STATES ON ELECTRON MOBILITY IN SILICON SURFACE-INVERSION LAYERS

10.1063/1.1754779

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

DC channel conductance of a number of experimental MOS transistor structures was measured and results used to calculate the surface state density and field-effect mobility. The mobility was found to increase with decreasing surface state concentration and to approach bulk mobility in samples with the lowest number of surface states. This behavior is shown to be consistent with Coulomb scattering by electrons trapped in surface states.

Bibliography

Arnold, E., & Abowitz, G. (1966). EFFECT OF SURFACE STATES ON ELECTRON MOBILITY IN SILICON SURFACE-INVERSION LAYERS. Applied Physics Letters, 9(9), 344â346.

Authors 2

Emil Arnold (first)
Gerald Abowitz (additional)

References 8 Referenced 38

10.1147/rd.84.0410 / IBM J. of Res. and Dev. (1964)
{'key': '2024020506145438100_r2', 'first-page': '248', 'volume': 'ED-12', 'year': '1965', 'journal-title': 'IEEE Trans. on Electron Devices'} / IEEE Trans. on Electron Devices (1965)
{'key': '2024020506145438100_r3', 'first-page': '1', 'volume': '14', 'year': '1965', 'journal-title': 'Abst. Electronics Div. Electrochem. Soc.'} / Abst. Electronics Div. Electrochem. Soc. (1965)
10.1109/PROC.1963.2488 / Proc. IEEE (1963)
{'key': '2024020506145438100_r5'}
{'key': '2024020506145438100_r6'}
10.1063/1.1754468 / Appl. Phys. Letters (1966)
10.1103/PhysRev.93.693 / Phys. Rev. (1954)

Dates

Type	When
Created	20 years, 5 months ago (March 1, 2005, 12:46 p.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 1:14 a.m.)
Indexed	4 months, 2 weeks ago (April 1, 2025, 2:23 a.m.)
Issued	58 years, 9 months ago (Nov. 1, 1966)
Published	58 years, 9 months ago (Nov. 1, 1966)
Published Print	58 years, 9 months ago (Nov. 1, 1966)

Funders 0

None

BibTeX

@article{Arnold_1966, title={EFFECT OF SURFACE STATES ON ELECTRON MOBILITY IN SILICON SURFACE-INVERSION LAYERS}, volume={9}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1754779}, DOI={10.1063/1.1754779}, number={9}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Arnold, Emil and Abowitz, Gerald}, year={1966}, month=nov, pages={344–346} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        4,
        1
      ]
    ],
    "date-time": "2025-04-01T06:23:35Z",
    "timestamp": 1743488615734
  },
  "reference-count": 8,
  "publisher": "AIP Publishing",
  "issue": "9",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1966,
        11,
        1
      ]
    ]
  },
  "abstract": "<jats:p>DC channel conductance of a number of experimental MOS transistor structures was measured and results used to calculate the surface state density and field-effect mobility. The mobility was found to increase with decreasing surface state concentration and to approach bulk mobility in samples with the lowest number of surface states. This behavior is shown to be consistent with Coulomb scattering by electrons trapped in surface states.</jats:p>",
  "DOI": "10.1063/1.1754779",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2005,
        3,
        1
      ]
    ],
    "date-time": "2005-03-01T17:46:09Z",
    "timestamp": 1109699169000
  },
  "page": "344-346",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 38,
  "title": "EFFECT OF SURFACE STATES ON ELECTRON MOBILITY IN SILICON SURFACE-INVERSION LAYERS",
  "prefix": "10.1063",
  "volume": "9",
  "author": [
    {
      "given": "Emil",
      "family": "Arnold",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Philips Laboratories, Briarcliff Manor, New York"
        }
      ]
    },
    {
      "given": "Gerald",
      "family": "Abowitz",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Philips Laboratories, Briarcliff Manor, New York"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020506145438100_r1",
      "doi-asserted-by": "crossref",
      "first-page": "410",
      "DOI": "10.1147/rd.84.0410",
      "volume": "8",
      "year": "1964",
      "journal-title": "IBM J. of Res. and Dev."
    },
    {
      "key": "2024020506145438100_r2",
      "first-page": "248",
      "volume": "ED-12",
      "year": "1965",
      "journal-title": "IEEE Trans. on Electron Devices"
    },
    {
      "key": "2024020506145438100_r3",
      "first-page": "1",
      "volume": "14",
      "year": "1965",
      "journal-title": "Abst. Electronics Div. Electrochem. Soc."
    },
    {
      "key": "2024020506145438100_r4",
      "doi-asserted-by": "crossref",
      "first-page": "1190",
      "DOI": "10.1109/PROC.1963.2488",
      "volume": "51",
      "year": "1963",
      "journal-title": "Proc. IEEE"
    },
    {
      "key": "2024020506145438100_r5"
    },
    {
      "key": "2024020506145438100_r6"
    },
    {
      "key": "2024020506145438100_r7",
      "doi-asserted-by": "crossref",
      "first-page": "31",
      "DOI": "10.1063/1.1754468",
      "volume": "8",
      "year": "1966",
      "journal-title": "Appl. Phys. Letters"
    },
    {
      "key": "2024020506145438100_r8",
      "doi-asserted-by": "crossref",
      "first-page": "693",
      "DOI": "10.1103/PhysRev.93.693",
      "volume": "93",
      "year": "1954",
      "journal-title": "Phys. Rev."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/9/9/344/18419349/344_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/9/9/344/18419349/344_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        5
      ]
    ],
    "date-time": "2024-02-05T06:14:58Z",
    "timestamp": 1707113698000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/9/9/344/116751/EFFECT-OF-SURFACE-STATES-ON-ELECTRON-MOBILITY-IN"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1966,
        11,
        1
      ]
    ]
  },
  "references-count": 8,
  "journal-issue": {
    "issue": "9",
    "published-print": {
      "date-parts": [
        [
          1966,
          11,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.1754779",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1966,
        11,
        1
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1966,
        11,
        1
      ]
    ]
  }
}