DOI: 10.1063/1.1754385. MOS CONDUCTANCE TECHNIQUE FOR MEASURING SURFACE STATE PARAMETERS

MOS CONDUCTANCE TECHNIQUE FOR MEASURING SURFACE STATE PARAMETERS

10.1063/1.1754385

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Bibliography

Nicollian, E. H., & Goetzberger, A. (1965). MOS CONDUCTANCE TECHNIQUE FOR MEASURING SURFACE STATE PARAMETERS. Applied Physics Letters, 7(8), 216â219.

Authors 2

E. H. Nicollian (first)
A. Goetzberger (additional)

References 9 Referenced 341

{'key': '2024020505584512000_r1', 'first-page': '108', 'volume': 'ED-12', 'year': '1965', 'journal-title': 'IEEE Trans. on Electron Devices'} / IEEE Trans. on Electron Devices (1965)
10.1016/0038-1101(62)90111-9 / Solid-State Electron. (1962)
{'key': '2024020505584512000_r3', 'volume': 'ED-12', 'year': '1965', 'journal-title': 'IEEE Trans. on Electron Devices'} / IEEE Trans. on Electron Devices (1965)
10.1016/0038-1101(64)90122-4 / Solid-State Electron. (1964)
10.1016/0038-1101(65)90148-6 / Solid-State Electron (1965)
10.1063/1.1702880 / J. Appl. Phys. (1964)
{'key': '2024020505584512000_r7', 'first-page': '646', 'volume': '3', 'year': '1958', 'journal-title': 'Sov. Phys.-Tech. Phys.'} / Sov. Phys.-Tech. Phys. (1958)
{'key': '2024020505584512000_r8', 'first-page': '150C', 'volume': '112', 'year': '1965', 'journal-title': 'J. Electrochem. Soc.'} / J. Electrochem. Soc. (1965)
{'key': '2024020505584512000_r9'}

Dates

Type	When
Created	20 years, 5 months ago (March 1, 2005, 12:40 p.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 12:58 a.m.)
Indexed	1 day, 23 hours ago (Aug. 30, 2025, 1:16 p.m.)
Issued	59 years, 10 months ago (Oct. 15, 1965)
Published	59 years, 10 months ago (Oct. 15, 1965)
Published Print	59 years, 10 months ago (Oct. 15, 1965)

Funders 0

None

BibTeX

@article{Nicollian_1965, title={MOS CONDUCTANCE TECHNIQUE FOR MEASURING SURFACE STATE PARAMETERS}, volume={7}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1754385}, DOI={10.1063/1.1754385}, number={8}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Nicollian, E. H. and Goetzberger, A.}, year={1965}, month=oct, pages={216–219} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        8,
        30
      ]
    ],
    "date-time": "2025-08-30T17:16:19Z",
    "timestamp": 1756574179634
  },
  "reference-count": 9,
  "publisher": "AIP Publishing",
  "issue": "8",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1965,
        10,
        15
      ]
    ]
  },
  "DOI": "10.1063/1.1754385",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2005,
        3,
        1
      ]
    ],
    "date-time": "2005-03-01T17:40:17Z",
    "timestamp": 1109698817000
  },
  "page": "216-219",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 341,
  "title": "MOS CONDUCTANCE TECHNIQUE FOR MEASURING SURFACE STATE PARAMETERS",
  "prefix": "10.1063",
  "volume": "7",
  "author": [
    {
      "given": "E. H.",
      "family": "Nicollian",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Bell Telephone Laboratories, Incorporated, Murray Hill, New Jersey"
        }
      ]
    },
    {
      "given": "A.",
      "family": "Goetzberger",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Bell Telephone Laboratories, Incorporated, Murray Hill, New Jersey"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020505584512000_r1",
      "first-page": "108",
      "volume": "ED-12",
      "year": "1965",
      "journal-title": "IEEE Trans. on Electron Devices"
    },
    {
      "key": "2024020505584512000_r2",
      "doi-asserted-by": "crossref",
      "first-page": "285",
      "DOI": "10.1016/0038-1101(62)90111-9",
      "volume": "5",
      "year": "1962",
      "journal-title": "Solid-State Electron."
    },
    {
      "key": "2024020505584512000_r3",
      "volume": "ED-12",
      "year": "1965",
      "journal-title": "IEEE Trans. on Electron Devices"
    },
    {
      "key": "2024020505584512000_r4",
      "doi-asserted-by": "crossref",
      "first-page": "59",
      "DOI": "10.1016/0038-1101(64)90122-4",
      "volume": "7",
      "year": "1964",
      "journal-title": "Solid-State Electron."
    },
    {
      "key": "2024020505584512000_r5",
      "doi-asserted-by": "crossref",
      "first-page": "321",
      "DOI": "10.1016/0038-1101(65)90148-6",
      "volume": "8",
      "year": "1965",
      "journal-title": "Solid-State Electron"
    },
    {
      "key": "2024020505584512000_r6",
      "doi-asserted-by": "crossref",
      "first-page": "2458",
      "DOI": "10.1063/1.1702880",
      "volume": "35",
      "year": "1964",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020505584512000_r7",
      "first-page": "646",
      "volume": "3",
      "year": "1958",
      "journal-title": "Sov. Phys.-Tech. Phys."
    },
    {
      "key": "2024020505584512000_r8",
      "first-page": "150C",
      "volume": "112",
      "year": "1965",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020505584512000_r9"
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/7/8/216/18418261/216_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/7/8/216/18418261/216_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        5
      ]
    ],
    "date-time": "2024-02-05T05:58:59Z",
    "timestamp": 1707112739000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/7/8/216/515145/MOS-CONDUCTANCE-TECHNIQUE-FOR-MEASURING-SURFACE"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1965,
        10,
        15
      ]
    ]
  },
  "references-count": 9,
  "journal-issue": {
    "issue": "8",
    "published-print": {
      "date-parts": [
        [
          1965,
          10,
          15
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.1754385",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1965,
        10,
        15
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1965,
        10,
        15
      ]
    ]
  }
}