Abstract
The thermal stability of electrically conducting SrRuO3 thin films grown by pulsed-laser deposition on (001) SrTiO3 substrates has been investigated by atomic force microscopy and reflection high-energy electron diffraction (RHEED) under reducing conditions (25–800 °C in 10−7–10−2 Torr O2). The as-grown SrRuO3 epitaxial films exhibit atomically flat surfaces with single unit-cell steps, even after exposure to air at room temperature. The films remain stable at temperatures as high as 720 °C in moderate oxygen ambients (>1 mTorr), but higher temperature anneals at lower pressures result in the formation of islands and pits due to the decomposition of SrRuO3. Using in situ RHEED, a temperature and oxygen pressure stability map was determined, consistent with a thermally activated decomposition process having an activation energy of 88 kJ/mol. The results can be used to determine the proper conditions for growth of additional epitaxial oxide layers on high quality electrically conducting SrRuO3.
References
17
Referenced
72
10.1103/PhysRevLett.81.3014
/ Phys. Rev. Lett. (1998)10.1063/1.126023
/ Appl. Phys. Lett. (2000)10.1021/ja01520a007
/ J. Am. Chem. Soc. (1959)10.1126/science.258.5089.1766
/ Science (1992)10.1063/1.113945
/ Appl. Phys. Lett. (1995)10.1126/science.1069958
/ Science (2002)10.1063/1.119869
/ Appl. Phys. Lett. (1997)10.1063/1.126366
/ Appl. Phys. Lett. (2000)10.1063/1.1570506
/ J. Appl. Phys. (2003){'key': '2024020403101301700_r10'}
10.1126/science.266.5190.1540
/ Science (1994)10.1063/1.122630
/ Appl. Phys. Lett. (1998)10.1063/1.1389837
/ Appl. Phys. Lett. (2001)10.1021/cr00065a001
/ Chem. Rev. (Washington, D.C.) (1985)10.1149/1.1557082
/ J. Electrochem. Soc. (2003)10.1103/PhysRevB.60.14396
/ Phys. Rev. B (1999){'key': '2024020403101301700_r17', 'first-page': '272', 'volume': '402–404', 'year': '1998', 'journal-title': 'Surf. Sci.'}
/ Surf. Sci. (1998)
Dates
Type | When |
---|---|
Created | 21 years, 3 months ago (May 6, 2004, 6:24 p.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 10:10 p.m.) |
Indexed | 2 months, 2 weeks ago (June 6, 2025, 3:05 p.m.) |
Issued | 21 years, 3 months ago (May 17, 2004) |
Published | 21 years, 3 months ago (May 17, 2004) |
Published Print | 21 years, 3 months ago (May 17, 2004) |
@article{Lee_2004, title={Thermal stability of epitaxial SrRuO3 films as a function of oxygen pressure}, volume={84}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1753650}, DOI={10.1063/1.1753650}, number={20}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Lee, Ho Nyung and Christen, Hans M. and Chisholm, Matthew F. and Rouleau, Christopher M. and Lowndes, Douglas H.}, year={2004}, month=may, pages={4107–4109} }