DOI: 10.1063/1.1745104. High-performance polycrystalline silicon thin-film transistor with multiple nanowire channels and lightly doped drain structure

High-performance polycrystalline silicon thin-film transistor with multiple nanowire channels and lightly doped drain structure

10.1063/1.1745104

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

This investigation examines polycrystalline silicon thin-film transistors (TFTs) with multiple nanowire channels and a lightly doped drain (LDD). A device with an LDD structure exhibits low leakage current because the lateral electrical field is reduced in the drain offset region. Additionally, multiple nanowire channels can generate fewer defects in the polysilicon grain boundary and have more efficient NH3 plasma passivation than single-channel TFTs, further reducing leakage current. They exhibit superior electrical characteristics to those of single-channel TFTs, such as a higher ON/OFF current ratio (&gt;108), a better subthreshold slope of 110 mV/decade, an absence of drain-induced barrier lowering, and suppressed kink-effect. Devices with the proposed TFTs are highly promising for use in active-matrix liquid-crystal display technologies.

Bibliography

Wu, Y.-C., Chang, T.-C., Chang, C.-Y., Chen, C.-S., Tu, C.-H., Liu, P.-T., Zan, H.-W., & Tai, Y.-H. (2004). High-performance polycrystalline silicon thin-film transistor with multiple nanowire channels and lightly doped drain structure. Applied Physics Letters, 84(19), 3822â3824.

Authors 8

Yung-Chun Wu (first)
Ting-Chang Chang (additional)
Chun-Yen Chang (additional)
Chi-Shen Chen (additional)
Chun-Hao Tu (additional)
Po-Tsun Liu (additional)
Hsiao-Wen Zan (additional)
Ya-Hsiang Tai (additional)

References 13 Referenced 31

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10.1088/0268-1242/10/6/001 / Semicond. Sci. Technol. (1995)
10.1109/T-ED.1985.21939 / IEEE Trans. Electron Devices (1985)
{'key': '2024020403061412500_r4', 'first-page': '38', 'volume': '98', 'year': '1998', 'journal-title': 'VLSI Tech. Dig.'} / VLSI Tech. Dig. (1998)
10.1109/16.127467 / IEEE Trans. Electron Devices (1992)
10.1063/1.111700 / Appl. Phys. Lett. (1994)
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{'key': '2024020403061412500_r13', 'first-page': '561', 'volume': '2002', 'year': '2002', 'journal-title': 'Tech. Dig.— Int. Electron Devices Meet.'} / Tech. Dig.— Int. Electron Devices Meet. (2002)

Dates

Type	When
Created	21 years, 4 months ago (May 3, 2004, 6:15 p.m.)
Deposited	1 year, 7 months ago (Feb. 3, 2024, 10:06 p.m.)
Indexed	1 year ago (Sept. 2, 2024, 1:07 p.m.)
Issued	21 years, 3 months ago (May 10, 2004)
Published	21 years, 3 months ago (May 10, 2004)
Published Print	21 years, 3 months ago (May 10, 2004)

Funders 0

None

BibTeX

@article{Wu_2004, title={High-performance polycrystalline silicon thin-film transistor with multiple nanowire channels and lightly doped drain structure}, volume={84}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1745104}, DOI={10.1063/1.1745104}, number={19}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Wu, Yung-Chun and Chang, Ting-Chang and Chang, Chun-Yen and Chen, Chi-Shen and Tu, Chun-Hao and Liu, Po-Tsun and Zan, Hsiao-Wen and Tai, Ya-Hsiang}, year={2004}, month=may, pages={3822–3824} }

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