Abstract
Measurements have been made on the thermoelectric power of several nickel oxide samples containing foreign ions. Using an energy model recently proposed for nickel oxide, the effect of the nature and concentration of additions on the Fermi level, hole concentration, and mobility is derived and discussed. For most of the samples hole concentration can be related to chemical composition. A case of change in valence of the addition induced upon introduction into the matrix is found. The use of the thermoelectric effect to determine impurity in nickel oxide is discussed. The energy scheme of nickel oxide which emerges from this work and that of Morin is emphasized as a drastic departure from the classical model of an electrical semiconductor.
References
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Dates
Type | When |
---|---|
Created | 20 years, 4 months ago (April 22, 2005, 1:26 p.m.) |
Deposited | 1 year, 6 months ago (Feb. 8, 2024, 12:13 p.m.) |
Indexed | 2 months, 1 week ago (June 17, 2025, 5:46 a.m.) |
Issued | 70 years, 7 months ago (Jan. 1, 1955) |
Published | 70 years, 7 months ago (Jan. 1, 1955) |
Published Print | 70 years, 7 months ago (Jan. 1, 1955) |
@article{Parravano_1955, title={Thermoelectric Behavior of Nickel Oxide}, volume={23}, ISSN={1089-7690}, url={http://dx.doi.org/10.1063/1.1740562}, DOI={10.1063/1.1740562}, number={1}, journal={The Journal of Chemical Physics}, publisher={AIP Publishing}, author={Parravano, G.}, year={1955}, month=jan, pages={5–10} }