Crossref journal-article
AIP Publishing
The Journal of Chemical Physics (317)
Abstract

Measurements have been made on the thermoelectric power of several nickel oxide samples containing foreign ions. Using an energy model recently proposed for nickel oxide, the effect of the nature and concentration of additions on the Fermi level, hole concentration, and mobility is derived and discussed. For most of the samples hole concentration can be related to chemical composition. A case of change in valence of the addition induced upon introduction into the matrix is found. The use of the thermoelectric effect to determine impurity in nickel oxide is discussed. The energy scheme of nickel oxide which emerges from this work and that of Morin is emphasized as a drastic departure from the classical model of an electrical semiconductor.

Bibliography

Parravano, G. (1955). Thermoelectric Behavior of Nickel Oxide. The Journal of Chemical Physics, 23(1), 5–10.

Authors 1
  1. G. Parravano (first)
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Dates
Type When
Created 20 years, 4 months ago (April 22, 2005, 1:26 p.m.)
Deposited 1 year, 6 months ago (Feb. 8, 2024, 12:13 p.m.)
Indexed 2 months, 1 week ago (June 17, 2025, 5:46 a.m.)
Issued 70 years, 7 months ago (Jan. 1, 1955)
Published 70 years, 7 months ago (Jan. 1, 1955)
Published Print 70 years, 7 months ago (Jan. 1, 1955)
Funders 0

None

@article{Parravano_1955, title={Thermoelectric Behavior of Nickel Oxide}, volume={23}, ISSN={1089-7690}, url={http://dx.doi.org/10.1063/1.1740562}, DOI={10.1063/1.1740562}, number={1}, journal={The Journal of Chemical Physics}, publisher={AIP Publishing}, author={Parravano, G.}, year={1955}, month=jan, pages={5–10} }