DOI: 10.1063/1.1739508. High mobility of pentacene field-effect transistors with polyimide gate dielectric layers

High mobility of pentacene field-effect transistors with polyimide gate dielectric layers

10.1063/1.1739508

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Polyimide gate dielectric layers cured at 180 °C have been employed to fabricate high-quality pentacene field-effect transistors on polyethylenenaphthalate-based films. The surface roughness (root-mean square) of gate dielectric layers characterized by atomic force microscopy is only 0.2 nm, while that of the base film is 1 nm. The transistors with pentacene channel layers deposited on 990 nm polyimide gate dielectric layers attain the on/off ratio of 106 and mobility of 0.3 cm2/V s. Furthermore, by decreasing the thickness of polyimide gate dielectric layers down to 540 nm, the mobility is enhanced up to 1 cm2/V s.

Bibliography

Kato, Y., Iba, S., Teramoto, R., Sekitani, T., Someya, T., Kawaguchi, H., & Sakurai, T. (2004). High mobility of pentacene field-effect transistors with polyimide gate dielectric layers. Applied Physics Letters, 84(19), 3789â3791.

Authors 7

Yusaku Kato (first)
Shingo Iba (additional)
Ryohei Teramoto (additional)
Tsuyoshi Sekitani (additional)
Takao Someya (additional)
Hiroshi Kawaguchi (additional)
Takayasu Sakurai (additional)

References 15 Referenced 156

10.1063/1.1579554 / Appl. Phys. Lett. (2003)
10.1063/1.121783 / Appl. Phys. Lett. (1998)
10.1063/1.1448659 / Appl. Phys. Lett. (2002)
10.1073/pnas.091588098 / Proc. Natl. Acad. Sci. U.S.A. (2001)
{'key': '2024020403024420700_r5'}
{'key': '2024020403024420700_r6', 'first-page': '203', 'journal-title': 'Tech. Dig. - Int. Electron Devices Meet. 2003'} / Tech. Dig. - Int. Electron Devices Meet. 2003
10.1063/1.1511826 / J. Appl. Phys. (2002)
10.1126/science.290.5499.2123 / Science (2000)
10.1002/1616-3028(20020805)12:8<526::AID-ADFM526>3.0.CO;2-S / Adv. Funct. Mater. (2002)
10.1021/cm9701163 / Chem. Mater. (1997)
{'key': '2024020403024420700_r11', 'first-page': '265', 'year': '2003', 'journal-title': 'Mater. Res. Soc. Symp. Proc.'} / Mater. Res. Soc. Symp. Proc. (2003)
{'key': '2024020403024420700_r12'}
{'key': '2024020403024420700_r13'}
{'key': '2024020403024420700_r14'}
10.1063/1.1579870 / Appl. Phys. Lett. (2003)

Dates

Type	When
Created	21 years, 3 months ago (May 3, 2004, 6:15 p.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 10:02 p.m.)
Indexed	4 months, 2 weeks ago (April 15, 2025, 2:11 a.m.)
Issued	21 years, 3 months ago (May 10, 2004)
Published	21 years, 3 months ago (May 10, 2004)
Published Print	21 years, 3 months ago (May 10, 2004)

Funders 0

None

BibTeX

@article{Kato_2004, title={High mobility of pentacene field-effect transistors with polyimide gate dielectric layers}, volume={84}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1739508}, DOI={10.1063/1.1739508}, number={19}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Kato, Yusaku and Iba, Shingo and Teramoto, Ryohei and Sekitani, Tsuyoshi and Someya, Takao and Kawaguchi, Hiroshi and Sakurai, Takayasu}, year={2004}, month=may, pages={3789–3791} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        4,
        15
      ]
    ],
    "date-time": "2025-04-15T06:11:57Z",
    "timestamp": 1744697517097
  },
  "reference-count": 15,
  "publisher": "AIP Publishing",
  "issue": "19",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2004,
        5,
        10
      ]
    ]
  },
  "abstract": "<jats:p>Polyimide gate dielectric layers cured at 180\u200a\u00b0C have been employed to fabricate high-quality pentacene field-effect transistors on polyethylenenaphthalate-based films. The surface roughness (root-mean square) of gate dielectric layers characterized by atomic force microscopy is only 0.2 nm, while that of the base film is 1 nm. The transistors with pentacene channel layers deposited on 990 nm polyimide gate dielectric layers attain the on/off ratio of 106 and mobility of 0.3 cm2/V\u200as. Furthermore, by decreasing the thickness of polyimide gate dielectric layers down to 540 nm, the mobility is enhanced up to 1 cm2/V\u200as.</jats:p>",
  "DOI": "10.1063/1.1739508",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2004,
        5,
        3
      ]
    ],
    "date-time": "2004-05-03T22:15:31Z",
    "timestamp": 1083622531000
  },
  "page": "3789-3791",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 156,
  "title": "High mobility of pentacene field-effect transistors with polyimide gate dielectric layers",
  "prefix": "10.1063",
  "volume": "84",
  "author": [
    {
      "given": "Yusaku",
      "family": "Kato",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Quantum Phase Electronics Center, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo\u2009113-8656, Japan"
        }
      ]
    },
    {
      "given": "Shingo",
      "family": "Iba",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Quantum Phase Electronics Center, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo\u2009113-8656, Japan"
        }
      ]
    },
    {
      "given": "Ryohei",
      "family": "Teramoto",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Quantum Phase Electronics Center, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo\u2009113-8656, Japan"
        }
      ]
    },
    {
      "given": "Tsuyoshi",
      "family": "Sekitani",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Quantum Phase Electronics Center, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo\u2009113-8656, Japan"
        }
      ]
    },
    {
      "given": "Takao",
      "family": "Someya",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Quantum Phase Electronics Center, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo\u2009113-8656, Japan"
        }
      ]
    },
    {
      "given": "Hiroshi",
      "family": "Kawaguchi",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Center of Collaborative Research, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo\u2009153-8904, Japan"
        }
      ]
    },
    {
      "given": "Takayasu",
      "family": "Sakurai",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Center of Collaborative Research, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo\u2009153-8904, Japan"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020403024420700_r1",
      "doi-asserted-by": "crossref",
      "first-page": "3964",
      "DOI": "10.1063/1.1579554",
      "volume": "82",
      "year": "2003",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020403024420700_r2",
      "doi-asserted-by": "crossref",
      "first-page": "108",
      "DOI": "10.1063/1.121783",
      "volume": "73",
      "year": "1998",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020403024420700_r3",
      "doi-asserted-by": "crossref",
      "first-page": "1088",
      "DOI": "10.1063/1.1448659",
      "volume": "80",
      "year": "2002",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020403024420700_r4",
      "doi-asserted-by": "crossref",
      "first-page": "4835",
      "DOI": "10.1073/pnas.091588098",
      "volume": "98",
      "year": "2001",
      "journal-title": "Proc. Natl. Acad. Sci. U.S.A."
    },
    {
      "key": "2024020403024420700_r5"
    },
    {
      "key": "2024020403024420700_r6",
      "first-page": "203",
      "journal-title": "Tech. Dig. - Int. Electron Devices Meet. 2003"
    },
    {
      "key": "2024020403024420700_r7",
      "doi-asserted-by": "crossref",
      "first-page": "5259",
      "DOI": "10.1063/1.1511826",
      "volume": "92",
      "year": "2002",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020403024420700_r8",
      "doi-asserted-by": "crossref",
      "first-page": "2123",
      "DOI": "10.1126/science.290.5499.2123",
      "volume": "290",
      "year": "2000",
      "journal-title": "Science"
    },
    {
      "key": "2024020403024420700_r9",
      "doi-asserted-by": "crossref",
      "first-page": "526",
      "DOI": "10.1002/1616-3028(20020805)12:8<526::AID-ADFM526>3.0.CO;2-S",
      "volume": "12",
      "year": "2002",
      "journal-title": "Adv. Funct. Mater."
    },
    {
      "key": "2024020403024420700_r10",
      "doi-asserted-by": "crossref",
      "first-page": "1299",
      "DOI": "10.1021/cm9701163",
      "volume": "9",
      "year": "1997",
      "journal-title": "Chem. Mater."
    },
    {
      "key": "2024020403024420700_r11",
      "first-page": "265",
      "year": "2003",
      "journal-title": "Mater. Res. Soc. Symp. Proc."
    },
    {
      "key": "2024020403024420700_r12"
    },
    {
      "key": "2024020403024420700_r13"
    },
    {
      "key": "2024020403024420700_r14"
    },
    {
      "key": "2024020403024420700_r15",
      "doi-asserted-by": "crossref",
      "first-page": "4175",
      "DOI": "10.1063/1.1579870",
      "volume": "82",
      "year": "2003",
      "journal-title": "Appl. Phys. Lett."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/84/19/3789/18588623/3789_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/84/19/3789/18588623/3789_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        4
      ]
    ],
    "date-time": "2024-02-04T03:02:49Z",
    "timestamp": 1707015769000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/84/19/3789/510753/High-mobility-of-pentacene-field-effect"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2004,
        5,
        10
      ]
    ]
  },
  "references-count": 15,
  "journal-issue": {
    "issue": "19",
    "published-print": {
      "date-parts": [
        [
          2004,
          5,
          10
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.1739508",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2004,
        5,
        10
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2004,
        5,
        10
      ]
    ]
  }
}