Abstract
We report on heteroepitaxial fabrication and structural characterizations of ultrafine GaN/ZnO coaxial nanorod heterostructures. The coaxial nanorod heterostructures were fabricated by epitaxial growth of a GaN layer on ultrafine ZnO nanorods. Epitaxial growth and precise control of GaN overlayer thickness were obtained by low pressure metalorganic vapor-phase epitaxy. ZnO nanorods grown on Si and sapphire substrates using catalyst-free metalorganic chemical vapor deposition exhibited diameters as small as 7 nm. Furthermore, structural properties of the coaxial nanorod heterostructures were investigated using both synchrotron-radiation x-ray diffraction and high resolution transmission electron microscopy.
References
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Dates
Type | When |
---|---|
Created | 21 years, 4 months ago (April 26, 2004, 6:12 p.m.) |
Deposited | 1 year, 7 months ago (Feb. 3, 2024, 10:02 p.m.) |
Indexed | 4 months ago (May 3, 2025, 3:42 p.m.) |
Issued | 21 years, 4 months ago (May 3, 2004) |
Published | 21 years, 4 months ago (May 3, 2004) |
Published Print | 21 years, 4 months ago (May 3, 2004) |
@article{An_2004, title={Heteroepitaxal fabrication and structural characterizations of ultrafine GaN/ZnO coaxial nanorod heterostructures}, volume={84}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1738180}, DOI={10.1063/1.1738180}, number={18}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={An, Sung Jin and Park, Won Il and Yi, Gyu-Chul and Kim, Yong-Jin and Kang, Hee-Bok and Kim, Miyoung}, year={2004}, month=may, pages={3612–3614} }