Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

We demonstrate the deposition of periodic arrays of uniformly sized GaN quantum dots onto a SiOx substrate. The dots are deposited using a nanolithography technique based on a combination of electron-beam-induced chemical vapor deposition and single-source molecular hydride chemistries. Under appropriate deposition conditions, we can deposit uniform dots of height 5 nm and full widths at half-maxima of 4 nm. The dot size is controlled by the spatial distribution of secondary electrons leaving the substrate surface. The smallest, most uniform void-free dots are created via nanolithography of molecules adsorbed on the substrate surface.

Bibliography

Crozier, P. A., Tolle, J., Kouvetakis, J., & Ritter, C. (2004). Synthesis of uniform GaN quantum dot arrays via electron nanolithography of D2GaN3. Applied Physics Letters, 84(18), 3441–3443.

Authors 4
  1. P. A. Crozier (first)
  2. J. Tolle (additional)
  3. J. Kouvetakis (additional)
  4. Cole Ritter (additional)
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Dates
Type When
Created 21 years, 4 months ago (April 26, 2004, 6:12 p.m.)
Deposited 1 year, 6 months ago (Feb. 3, 2024, 10 p.m.)
Indexed 2 weeks, 6 days ago (Aug. 6, 2025, 8:53 a.m.)
Issued 21 years, 3 months ago (May 3, 2004)
Published 21 years, 3 months ago (May 3, 2004)
Published Print 21 years, 3 months ago (May 3, 2004)
Funders 0

None

@article{Crozier_2004, title={Synthesis of uniform GaN quantum dot arrays via electron nanolithography of D2GaN3}, volume={84}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1736314}, DOI={10.1063/1.1736314}, number={18}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Crozier, P. A. and Tolle, J. and Kouvetakis, J. and Ritter, Cole}, year={2004}, month=may, pages={3441–3443} }