Abstract
A theory of the current flow across grain boundaries in n-type germanium is given. In the temperature range where carrier generation in the space charge region can be neglected and for donor concentrations in the bulk larger than 1014/cm3, the current is carried essentially by electrons crossing the barrier, the zero bias conductance is independent of the donor concentration and is given by G0=2.2·108Te−φ0/kT. The apparent activation energy φ0 is directly related to the barrier height. The current for applied voltages which are large compared to kT/q fails to saturate. The deviation for saturation is related to the density of states in the boundary band. At sufficiently low temperatures the carrier generation in the space-charge region is the rate-determining process for the current flow across the boundary.
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Dates
Type | When |
---|---|
Created | 20 years, 4 months ago (April 22, 2005, 12:28 p.m.) |
Deposited | 7 months, 3 weeks ago (Dec. 31, 2024, 4:39 p.m.) |
Indexed | 7 months, 3 weeks ago (Jan. 1, 2025, 12:29 a.m.) |
Issued | 64 years, 4 months ago (April 1, 1961) |
Published | 64 years, 4 months ago (April 1, 1961) |
Published Print | 64 years, 4 months ago (April 1, 1961) |
@article{Mueller_1961, title={Current Flow across Grain Boundaries inn-Type Germanium. I}, volume={32}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1736062}, DOI={10.1063/1.1736062}, number={4}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Mueller, R. K.}, year={1961}, month=apr, pages={635–639} }