Abstract
The resistance of thin aluminum-oxide films has been measured as a function of the voltage across the film and of the film thickness as calculated from its capacitance. All films showed ohmic behavior at low voltages, and exponential rise of current at higher voltages, in qualitative agreement with R. Holm's theoretical calculations for tunneling through thin vacuum layers. However, the resistance was several orders of magnitude lower than either the bulk value for Al2O3 or the calculated value for tunneling through vacuum. By making use of an effective mass in the oxide equal to about19 of the electron mass, the calculated values for tunneling can be brought into line with the experimental results.
References
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Dates
Type | When |
---|---|
Created | 20 years, 4 months ago (April 22, 2005, 12:28 p.m.) |
Deposited | 1 year, 7 months ago (Feb. 1, 2024, 2:34 p.m.) |
Indexed | 4 weeks, 1 day ago (Aug. 6, 2025, 8:24 a.m.) |
Issued | 64 years, 7 months ago (Feb. 1, 1961) |
Published | 64 years, 7 months ago (Feb. 1, 1961) |
Published Print | 64 years, 7 months ago (Feb. 1, 1961) |
@article{Fisher_1961, title={Tunneling Through Thin Insulating Layers}, volume={32}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1735973}, DOI={10.1063/1.1735973}, number={2}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Fisher, J. C. and Giaever, I.}, year={1961}, month=feb, pages={172–177} }