DOI: 10.1063/1.1729602. Role of Oxygen in Reducing Silicon Contamination of GaAs during Crystal Growth

Role of Oxygen in Reducing Silicon Contamination of GaAs during Crystal Growth

10.1063/1.1729602

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

GaAs grown in a horizontal Bridgman crystal growth apparatus to which oxygen has been added exhibits lower silicon content than that grown without oxygen. Material grown under oxygen additions of 10–20 Torr exhibits, at room temperature, carrier densities in the 2–4×1015 cm−3 range and mobilities between 7500–8650 cm2 V−1 sec−1. Silicon concentrations computed from the reaction 4Ga+SiO2 → 2Ga2O+Si are compared with electrical determinations of donor densities and spectroscopic determinations of silicon concentrations with reasonably good agreement. It is concluded that suppression of SiO2 dissociation at the walls of the silica reaction tube is the most important action of oxygen on GaAs properties although oxygen doping may play a role in the production of high resistivity GaAs.

Bibliography

Woods, J. F., & Ainslie, N. G. (1963). Role of Oxygen in Reducing Silicon Contamination of GaAs during Crystal Growth. Journal of Applied Physics, 34(5), 1469â1475.

Authors 2

J. F. Woods (first)
N. G. Ainslie (additional)

References 8 Referenced 57

{'key': '2024020206503652200_r1', 'first-page': '2391', 'volume': '33', 'year': '1962', 'journal-title': 'J. Appl. Phys.'} / J. Appl. Phys. (1962)
10.1149/1.2425347 / J. Electrochem. Soc. (1962)
10.1038/192155a0 / Nature (1961)
10.1021/cr60206a002 / Chem. Rev. (1960)
{'key': '2024020206503652200_r5', 'first-page': '1021', 'volume': '221', 'year': '1961', 'journal-title': 'Trans. AIME'} / Trans. AIME (1961)
10.1063/1.1777019 / J. Appl. Phys. (1961)
{'key': '2024020206503652200_r7'}
{'key': '2024020206503652200_r8'}

Dates

Type	When
Created	20 years, 4 months ago (April 22, 2005, 12:31 p.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 1:50 a.m.)
Indexed	1 year, 1 month ago (July 5, 2024, 12:32 p.m.)
Issued	62 years, 3 months ago (May 1, 1963)
Published	62 years, 3 months ago (May 1, 1963)
Published Print	62 years, 3 months ago (May 1, 1963)

Funders 0

None

BibTeX

@article{Woods_1963, title={Role of Oxygen in Reducing Silicon Contamination of GaAs during Crystal Growth}, volume={34}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1729602}, DOI={10.1063/1.1729602}, number={5}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Woods, J. F. and Ainslie, N. G.}, year={1963}, month=may, pages={1469–1475} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2024,
        7,
        5
      ]
    ],
    "date-time": "2024-07-05T16:32:42Z",
    "timestamp": 1720197162968
  },
  "reference-count": 8,
  "publisher": "AIP Publishing",
  "issue": "5",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1963,
        5,
        1
      ]
    ]
  },
  "abstract": "<jats:p>GaAs grown in a horizontal Bridgman crystal growth apparatus to which oxygen has been added exhibits lower silicon content than that grown without oxygen. Material grown under oxygen additions of 10\u201320 Torr exhibits, at room temperature, carrier densities in the 2\u20134\u00d71015 cm\u22123 range and mobilities between 7500\u20138650 cm2 V\u22121 sec\u22121.</jats:p>\n               <jats:p>Silicon concentrations computed from the reaction 4Ga+SiO2 \u2192 2Ga2O+Si are compared with electrical determinations of donor densities and spectroscopic determinations of silicon concentrations with reasonably good agreement. It is concluded that suppression of SiO2 dissociation at the walls of the silica reaction tube is the most important action of oxygen on GaAs properties although oxygen doping may play a role in the production of high resistivity GaAs.</jats:p>",
  "DOI": "10.1063/1.1729602",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2005,
        4,
        22
      ]
    ],
    "date-time": "2005-04-22T16:31:53Z",
    "timestamp": 1114187513000
  },
  "page": "1469-1475",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 57,
  "title": "Role of Oxygen in Reducing Silicon Contamination of GaAs during Crystal Growth",
  "prefix": "10.1063",
  "volume": "34",
  "author": [
    {
      "given": "J. F.",
      "family": "Woods",
      "sequence": "first",
      "affiliation": [
        {
          "name": "IBM Thomas J. Watson Research Center, Yorktown Heights, New York"
        }
      ]
    },
    {
      "given": "N. G.",
      "family": "Ainslie",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "IBM Thomas J. Watson Research Center, Yorktown Heights, New York"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020206503652200_r1",
      "first-page": "2391",
      "volume": "33",
      "year": "1962",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020206503652200_r2",
      "doi-asserted-by": "crossref",
      "first-page": "144",
      "DOI": "10.1149/1.2425347",
      "volume": "109",
      "year": "1962",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020206503652200_r3",
      "doi-asserted-by": "crossref",
      "first-page": "155",
      "DOI": "10.1038/192155a0",
      "volume": "192",
      "year": "1961",
      "journal-title": "Nature"
    },
    {
      "key": "2024020206503652200_r4",
      "doi-asserted-by": "crossref",
      "first-page": "331",
      "DOI": "10.1021/cr60206a002",
      "volume": "60",
      "year": "1960",
      "journal-title": "Chem. Rev."
    },
    {
      "key": "2024020206503652200_r5",
      "first-page": "1021",
      "volume": "221",
      "year": "1961",
      "journal-title": "Trans. AIME"
    },
    {
      "key": "2024020206503652200_r6",
      "doi-asserted-by": "crossref",
      "first-page": "2069",
      "DOI": "10.1063/1.1777019",
      "volume": "32",
      "year": "1961",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020206503652200_r7"
    },
    {
      "key": "2024020206503652200_r8"
    }
  ],
  "container-title": "Journal of Applied Physics",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/34/5/1469/18328745/1469_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/34/5/1469/18328745/1469_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        2
      ]
    ],
    "date-time": "2024-02-02T06:50:50Z",
    "timestamp": 1706856650000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/jap/article/34/5/1469/164051/Role-of-Oxygen-in-Reducing-Silicon-Contamination"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1963,
        5,
        1
      ]
    ]
  },
  "references-count": 8,
  "journal-issue": {
    "issue": "5",
    "published-print": {
      "date-parts": [
        [
          1963,
          5,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.1729602",
  "relation": {},
  "ISSN": [
    "0021-8979",
    "1089-7550"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1963,
        5
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1963,
        5,
        1
      ]
    ]
  }
}