DOI: 10.1063/1.1728811. Energy Bands in Semiconductors

10.1063/1.1728811

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

A review is given of the energy band structures in a number of relatively well understood semiconductors, including Si and Ge, the Group III–V compounds, the IV–VI compounds (lead salts), CdAs2, and Bi2Te3, and of the experimental methods which have been used in determining these band structures. This review is directed particularly toward the interests of those engaged in applied research and development of semiconductor devices which depend more or less specifically on band structure properties for their operation. It is also meant to provide a single source of the latest available energy band information for those engaged in basic research on semiconductors and for students.

Bibliography

Long, D. (1962). Energy Bands in Semiconductors. Journal of Applied Physics, 33(5), 1682â1696.

Authors 1

Donald Long (first)

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Dates

Type	When
Created	20 years, 4 months ago (April 22, 2005, 12:31 p.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 1:20 a.m.)
Indexed	1 year, 6 months ago (Feb. 2, 2024, 3:29 a.m.)
Issued	63 years, 3 months ago (May 1, 1962)
Published	63 years, 3 months ago (May 1, 1962)
Published Print	63 years, 3 months ago (May 1, 1962)

Funders 0

None

BibTeX

@article{Long_1962, title={Energy Bands in Semiconductors}, volume={33}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1728811}, DOI={10.1063/1.1728811}, number={5}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Long, Donald}, year={1962}, month=may, pages={1682–1696} }

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