Abstract
An explanation of the ``excess current'' up to and including the valley point, observed in tunnel diodes, is suggested in terms of tunneling between impurity band states of the heavily doped p and n regions. Density-of-states curves are constructed, based on several different models of impurity bands, and the tunneling current between such bands is computed and compared with experiment. The effect of different base materials and impurities on the valley current is discussed. Some aspects of impurity band formation in heavily doped semiconductors are considered, and possible modifications and difficulties of the present approach are indicated. The possibility of obtaining information about impurity band structure from tunnel diode measurements is discussed. Experimental evidence is presented about the position of the Fermi level in heavily doped semiconductors and is shown to agree with that postulated by the present model. The Appendix gives the theory of locating the Fermi levels from measurements of the temperature variation of the diode characteristic.
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Dates
Type | When |
---|---|
Created | 20 years, 4 months ago (April 22, 2005, 12:31 p.m.) |
Deposited | 1 year, 6 months ago (Feb. 2, 2024, 1:12 a.m.) |
Indexed | 1 year, 6 months ago (Feb. 4, 2024, 2:59 p.m.) |
Issued | 63 years, 7 months ago (Jan. 1, 1962) |
Published | 63 years, 7 months ago (Jan. 1, 1962) |
Published Print | 63 years, 7 months ago (Jan. 1, 1962) |
@article{Brody_1962, title={Nature of the Valley Current in Tunnel Diodes}, volume={33}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1728464}, DOI={10.1063/1.1728464}, number={1}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Brody, T. P.}, year={1962}, month=jan, pages={100–111} }