DOI: 10.1063/1.1728351. A Method for the Measurement of Short Minority Carrier Diffusion Lengths in Semiconductors

A Method for the Measurement of Short Minority Carrier Diffusion Lengths in Semiconductors

10.1063/1.1728351

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

A method is presented whereby short minority carrier diffusion lengths in semiconductors may be determined by measuring the variation of surface photovoltage as a function of optical absorption coefficient. The method does not depend upon the specific form of the relationship between the surface photovoltage and the density of the excess minority carriers injected at the bulk edge of the surface space charge region. Only capacitive contacts to the sample are needed for the measurement. The method has been used to determine the minority carrier diffusion length in both n and p type gallium arsenide.

Bibliography

Goodman, A. M. (1961). A Method for the Measurement of Short Minority Carrier Diffusion Lengths in Semiconductors. Journal of Applied Physics, 32(12), 2550â2552.

Authors 1

Alvin M. Goodman (first)

References 18 Referenced 292

10.1103/PhysRev.90.278 / Phys. Rev. (1953)
{'key': '2024020205594262300_r2', 'first-page': '152', 'volume': '90', 'year': '1953', 'journal-title': 'Phys. Rev.'} / Phys. Rev. (1953)
{'key': '2024020205594262300_r3', 'first-page': '265', 'volume': '5', 'year': '1960', 'journal-title': 'Bull. Am. Phys. Soc.'} / Bull. Am. Phys. Soc. (1960)
10.1051/jphysrad:01960002107057500 / J. phys. radium (1960)
{'key': '2024020205594262300_r5'}
10.1002/j.1538-7305.1953.tb01420.x / Bell System Tech. J. (1953)
10.1103/PhysRev.99.376 / Phys. Rev. (1955)
10.1103/PhysRev.111.153 / Phys. Rev. (1958)
10.1080/00207215508961396 / J. Electronics and Control (1955)
{'key': '2024020205594262300_r10'}
{'key': '2024020205594262300_r11'}
{'key': '2024020205594262300_r12'}
{'key': '2024020205594262300_r13'}
10.1103/PhysRev.116.793 / Phys. Rev. (1959)
10.1103/PhysRev.101.1713 / Phys. Rev. (1956)
10.1088/0370-1301/66/9/304 / Proc. Phys. Soc. (London) (1953)
{'key': '2024020205594262300_r17'}
{'key': '2024020205594262300_r18'}

Dates

Type	When
Created	20 years, 4 months ago (April 22, 2005, 12:28 p.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 12:59 a.m.)
Indexed	7 minutes ago (Aug. 30, 2025, 3:46 p.m.)
Issued	63 years, 8 months ago (Dec. 1, 1961)
Published	63 years, 8 months ago (Dec. 1, 1961)
Published Print	63 years, 8 months ago (Dec. 1, 1961)

Funders 0

None

BibTeX

@article{Goodman_1961, title={A Method for the Measurement of Short Minority Carrier Diffusion Lengths in Semiconductors}, volume={32}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1728351}, DOI={10.1063/1.1728351}, number={12}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Goodman, Alvin M.}, year={1961}, month=dec, pages={2550–2552} }

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