Abstract
As-sputtered and melt-quenched amorphous structures together with the laser-induced crystallized structure of Ge-Sb-Te thin films were investigated using high-resolution electron microscopy (HREM) and nanobeam electron diffraction (NBED). Each of the Ge-Sb-Te thin films was embedded in a four-layered stack, which is the same as the layered structure of phase-change optical disks. Cross-sectional HREM revealed crystalline atomic clusters in the melt-quenched amorphous layer at a greater frequency than in the as-sputtered amorphous layer. Autocorrelation function analysis of the HREM images revealed similarity between the structures of atomic ordered regions in the amorphous phase and that of crystalline Sb. Atomic pair-distribution functions derived from halo NBED intensity analysis indicated that the atomic neighbor correlations developed more in the melt-quenched amorphous phase than in the as-sputtered phase. The development of locally ordered regions is considered to be closely related to the differences in optical properties and crystallization behaviors between these two amorphous phases.
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Dates
Type | When |
---|---|
Created | 21 years, 2 months ago (May 28, 2004, 6:01 p.m.) |
Deposited | 1 year, 6 months ago (Feb. 7, 2024, 7:24 p.m.) |
Indexed | 1 year, 6 months ago (Feb. 7, 2024, 7:43 p.m.) |
Issued | 21 years, 2 months ago (June 15, 2004) |
Published | 21 years, 2 months ago (June 15, 2004) |
Published Print | 21 years, 2 months ago (June 15, 2004) |
@article{Naito_2004, title={Local structure analysis of Ge-Sb-Te phase change materials using high-resolution electron microscopy and nanobeam diffraction}, volume={95}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1728316}, DOI={10.1063/1.1728316}, number={12}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Naito, Muneyuki and Ishimaru, Manabu and Hirotsu, Yoshihiko and Takashima, Masaki}, year={2004}, month=jun, pages={8130–8135} }