Abstract
A relation between minority carrier lifetime and recovery time has been obtained for p-n junction rectifiers of arbitrary base width. In the limiting cases of base width large or small compared to a diffusion length the recovery time is found to depend on the lifetime or on the transit across the base region, respectively. In intermediate cases, the recovery time is a function of both the lifetime and the transit time. Recovery time measurements on diffused junction silicon rectifiers as a junction of base width were found to be in satisfactory agreement with the theory.
References
3
Referenced
33
{'key': '2024020121210896300_r1', 'first-page': '829', 'volume': '42', 'year': '1954', 'journal-title': 'Proc. Inst. Radio Engrs.'}
/ Proc. Inst. Radio Engrs. (1954)10.1063/1.1721830
/ J. Appl. Phys. (1954)10.1103/PhysRev.83.151
/ Phys. Rev. (1951)
Dates
Type | When |
---|---|
Created | 20 years, 4 months ago (April 22, 2005, 12:10 p.m.) |
Deposited | 1 year, 6 months ago (Feb. 1, 2024, 5:21 p.m.) |
Indexed | 3 weeks, 1 day ago (Aug. 7, 2025, 4:28 p.m.) |
Issued | 68 years ago (Aug. 1, 1957) |
Published | 68 years ago (Aug. 1, 1957) |
Published Print | 68 years ago (Aug. 1, 1957) |
@article{Byczkowski_1957, title={Minority Carrier Lifetime in p-n Junction Devices}, volume={28}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1722879}, DOI={10.1063/1.1722879}, number={8}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Byczkowski, M. and Madigan, J. R.}, year={1957}, month=aug, pages={878–881} }