DOI: 10.1063/1.1714527. Transmission Electron Microscope Study of Gallium Arsenide

Transmission Electron Microscope Study of Gallium Arsenide

10.1063/1.1714527

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

A technique is presented for preparing transmission electron microscope samples of gallium arsenide by a combination of chemical and electrolytic polishing. Both A(111) and B(1̄1̄1̄) as well as {100} surfaces of wafers obtained from two sources were examined by transmission electron microscopy after a variety of surface treatments. In general, B(1̄1̄1̄) and {100} surfaces were damaged more heavily than A(111) surfaces by mechanical polishing with 1-μ diamond. Aside from the surface damage the crystals were remarkably dislocation free, although precipitates of different kinds were observed. One type of precipitate clusters in the shape of tori, and can be revealed in the optical microscope by lightly electropolishing a mechanically polished wafer or by etching a polished wafer in the Sirtl etch. The other type of precipitate has contrast in the electron microscope similar to stacking faults, and may be due to an oxide of some type.

Bibliography

Meieran, E. S. (1965). Transmission Electron Microscope Study of Gallium Arsenide. Journal of Applied Physics, 36(8), 2544â2549.

Authors 1

Eugene S. Meieran (first)

References 15 Referenced 38

10.1149/1.2427712 / J. Electrochem. Soc. (1960)
10.1063/1.1735829 / J. Appl. Phys. (1960)
{'key': '2024020208252394000_r3', 'first-page': '646', 'volume': '108', 'year': '1961', 'journal-title': 'J. Electrochem. Soc.'} / J. Electrochem. Soc. (1961)
{'key': '2024020208252394000_r4'}
10.1063/1.1702544 / J. Appl. Phys. (1962)
{'key': '2024020208252394000_r6'}
{'key': '2024020208252394000_r7', 'first-page': '284', 'volume': '227', 'year': '1963', 'journal-title': 'Trans. AIME'} / Trans. AIME (1963)
{'key': '2024020208252394000_r8', 'first-page': '880', 'volume': '109', 'year': '1960', 'journal-title': 'J. Electrochem. Soc.'} / J. Electrochem. Soc. (1960)
{'key': '2024020208252394000_r9'}
10.1143/JPSJ.16.61 / J. Phys. Soc. Japan (1961)
10.1063/1.1777159 / J. Appl. Phys. (1962)
10.1063/1.1723356 / J. Appl. Phys. (1958)
10.1149/1.2425820 / J. Electrochem. Soc. (1963)
10.1063/1.1713777 / J. Appl. Phys. (1964)
{'key': '2024020208252394000_r15'}

Dates

Type	When
Created	20 years, 4 months ago (April 22, 2005, 12:39 p.m.)
Deposited	1 year, 7 months ago (Feb. 2, 2024, 4:47 a.m.)
Indexed	1 year, 7 months ago (Feb. 5, 2024, 1:58 a.m.)
Issued	60 years, 1 month ago (Aug. 1, 1965)
Published	60 years, 1 month ago (Aug. 1, 1965)
Published Print	60 years, 1 month ago (Aug. 1, 1965)

Funders 0

None

BibTeX

@article{Meieran_1965, title={Transmission Electron Microscope Study of Gallium Arsenide}, volume={36}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1714527}, DOI={10.1063/1.1714527}, number={8}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Meieran, Eugene S.}, year={1965}, month=aug, pages={2544–2549} }

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