DOI: 10.1063/1.1714315. Cathodoluminescence at <i>p</i>-<i>n</i> Junctions in GaAs

Cathodoluminescence at p-n Junctions in GaAs

10.1063/1.1714315

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

A decrease in the cathodoluminescence produced in GaAs by a scanning electron probe has been observed when the probe is close to a p-n junction. The decreased intensity is shown to result from the drift of excess carriers across the junction. Measurements of the short-circuit current of the diode confirm this interpretation and provide a means of estimating minority carrier diffusion lengths.

Bibliography

Wittry, D. B., & Kyser, D. F. (1965). Cathodoluminescence at p-n Junctions in GaAs. Journal of Applied Physics, 36(4), 1387â1389.

Authors 2

David B. Wittry (first)
David F. Kyser (additional)

References 4 Referenced 114

10.1063/1.1702876 / J. Appl. Phys. (1964)
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Dates

Type	When
Created	20 years, 4 months ago (April 22, 2005, 12:39 p.m.)
Deposited	1 year, 7 months ago (Feb. 2, 2024, 4:38 a.m.)
Indexed	2 months, 1 week ago (June 25, 2025, 7:05 p.m.)
Issued	60 years, 5 months ago (April 1, 1965)
Published	60 years, 5 months ago (April 1, 1965)
Published Print	60 years, 5 months ago (April 1, 1965)

Funders 0

None

BibTeX

@article{Wittry_1965, title={Cathodoluminescence at p-n Junctions in GaAs}, volume={36}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1714315}, DOI={10.1063/1.1714315}, number={4}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Wittry, David B. and Kyser, David F.}, year={1965}, month=apr, pages={1387–1389} }

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