DOI: 10.1063/1.1713825. Redistribution of Acceptor and Donor Impurities during Thermal Oxidation of Silicon

Redistribution of Acceptor and Donor Impurities during Thermal Oxidation of Silicon

10.1063/1.1713825

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

The redistribution of impurities during thermal oxidation of silicon was studied both theoretically and experimentally. Experiments with specific impurities indicate that gallium, boron, and indium deplete from silicon, while phosphorus, antimony, and arsenic pile up during thermal oxidation. It is shown that the redistribution process can be significantly influenced by the escape of impurities through the oxide layer as well as by the segregation of the impurity at the oxide-silicon interface.

Bibliography

Grove, A. S., Leistiko, O., & Sah, C. T. (1964). Redistribution of Acceptor and Donor Impurities during Thermal Oxidation of Silicon. Journal of Applied Physics, 35(9), 2695â2701.

Authors 3

A. S. Grove (first)
O. Leistiko (additional)
C. T. Sah (additional)

References 17 Referenced 271

10.1002/j.1538-7305.1960.tb03947.x / Bell System Tech. J. (1960)
{'key': '2024020207490170700_r2'}
{'key': '2024020207490170700_r3'}
{'key': '2024020207490170700_r4'}
{'key': '2024020207490170700_r5'}
{'key': '2024020207490170700_r6'}
10.1149/1.2425807 / J. Electrochem. Soc. (1963)
{'key': '2024020207490170700_r8', 'first-page': '245', 'volume': '21', 'year': '1960', 'journal-title': 'RCA Rev.'} / RCA Rev. (1960)
10.1063/1.1722968 / J. Appl. Phys. (1958)
10.1021/j100811a027 / J. Phys. Chem. (1962)
10.1063/1.1735562 / J. Appl. Phys. (1960)
10.1143/JJAP.1.314 / Japanese J. Appl. Phys. (1962)
10.1149/1.2428650 / J. Electrochem. Soc. (1957)
10.1063/1.1722419 / J. Appl. Phys. (1956)
10.1103/PhysRev.108.1416 / Phys. Rev. (1957)
10.1016/0022-3697(59)90229-X / J. Phys. Chem. Solids (1959)
{'key': '2024020207490170700_r17'}

Dates

Type	When
Created	20 years, 4 months ago (April 22, 2005, 12:38 p.m.)
Deposited	1 year, 7 months ago (Feb. 2, 2024, 4:01 a.m.)
Indexed	1 week, 6 days ago (Aug. 20, 2025, 8:31 a.m.)
Issued	61 years ago (Sept. 1, 1964)
Published	61 years ago (Sept. 1, 1964)
Published Print	61 years ago (Sept. 1, 1964)

Funders 0

None

BibTeX

@article{Grove_1964, title={Redistribution of Acceptor and Donor Impurities during Thermal Oxidation of Silicon}, volume={35}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1713825}, DOI={10.1063/1.1713825}, number={9}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Grove, A. S. and Leistiko, O. and Sah, C. T.}, year={1964}, month=sep, pages={2695–2701} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        8,
        20
      ]
    ],
    "date-time": "2025-08-20T12:31:35Z",
    "timestamp": 1755693095438
  },
  "reference-count": 17,
  "publisher": "AIP Publishing",
  "issue": "9",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1964,
        9,
        1
      ]
    ]
  },
  "abstract": "<jats:p>The redistribution of impurities during thermal oxidation of silicon was studied both theoretically and experimentally. Experiments with specific impurities indicate that gallium, boron, and indium deplete from silicon, while phosphorus, antimony, and arsenic pile up during thermal oxidation. It is shown that the redistribution process can be significantly influenced by the escape of impurities through the oxide layer as well as by the segregation of the impurity at the oxide-silicon interface.</jats:p>",
  "DOI": "10.1063/1.1713825",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2005,
        4,
        22
      ]
    ],
    "date-time": "2005-04-22T16:38:15Z",
    "timestamp": 1114187895000
  },
  "page": "2695-2701",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 271,
  "title": "Redistribution of Acceptor and Donor Impurities during Thermal Oxidation of Silicon",
  "prefix": "10.1063",
  "volume": "35",
  "author": [
    {
      "given": "A. S.",
      "family": "Grove",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Fairchild Semiconductor, A Division of Fairchild Camera & Instrument Corporation, Palo Alto, California"
        }
      ]
    },
    {
      "suffix": "Jr.",
      "given": "O.",
      "family": "Leistiko",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Fairchild Semiconductor, A Division of Fairchild Camera & Instrument Corporation, Palo Alto, California"
        }
      ]
    },
    {
      "given": "C. T.",
      "family": "Sah",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Fairchild Semiconductor, A Division of Fairchild Camera & Instrument Corporation, Palo Alto, California"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020207490170700_r1",
      "doi-asserted-by": "crossref",
      "first-page": "933",
      "DOI": "10.1002/j.1538-7305.1960.tb03947.x",
      "volume": "39",
      "year": "1960",
      "journal-title": "Bell System Tech. J."
    },
    {
      "key": "2024020207490170700_r2"
    },
    {
      "key": "2024020207490170700_r3"
    },
    {
      "key": "2024020207490170700_r4"
    },
    {
      "key": "2024020207490170700_r5"
    },
    {
      "key": "2024020207490170700_r6"
    },
    {
      "key": "2024020207490170700_r7",
      "doi-asserted-by": "crossref",
      "first-page": "527",
      "DOI": "10.1149/1.2425807",
      "volume": "110",
      "year": "1963",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020207490170700_r8",
      "first-page": "245",
      "volume": "21",
      "year": "1960",
      "journal-title": "RCA Rev."
    },
    {
      "key": "2024020207490170700_r9",
      "doi-asserted-by": "crossref",
      "first-page": "1456",
      "DOI": "10.1063/1.1722968",
      "volume": "29",
      "year": "1958",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020207490170700_r10",
      "doi-asserted-by": "crossref",
      "first-page": "877",
      "DOI": "10.1021/j100811a027",
      "volume": "66",
      "year": "1962",
      "journal-title": "J. Phys. Chem."
    },
    {
      "key": "2024020207490170700_r11",
      "doi-asserted-by": "crossref",
      "first-page": "303",
      "DOI": "10.1063/1.1735562",
      "volume": "31",
      "year": "1960",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020207490170700_r12",
      "doi-asserted-by": "crossref",
      "first-page": "314",
      "DOI": "10.1143/JJAP.1.314",
      "volume": "1",
      "year": "1962",
      "journal-title": "Japanese J. Appl. Phys."
    },
    {
      "key": "2024020207490170700_r13",
      "doi-asserted-by": "crossref",
      "first-page": "547",
      "DOI": "10.1149/1.2428650",
      "volume": "104",
      "year": "1957",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020207490170700_r14",
      "doi-asserted-by": "crossref",
      "first-page": "544",
      "DOI": "10.1063/1.1722419",
      "volume": "27",
      "year": "1956",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020207490170700_r15",
      "doi-asserted-by": "crossref",
      "first-page": "1416",
      "DOI": "10.1103/PhysRev.108.1416",
      "volume": "108",
      "year": "1957",
      "journal-title": "Phys. Rev."
    },
    {
      "key": "2024020207490170700_r16",
      "doi-asserted-by": "crossref",
      "first-page": "288",
      "DOI": "10.1016/0022-3697(59)90229-X",
      "volume": "11",
      "year": "1959",
      "journal-title": "J. Phys. Chem. Solids"
    },
    {
      "key": "2024020207490170700_r17"
    }
  ],
  "container-title": "Journal of Applied Physics",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/35/9/2695/18333023/2695_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/35/9/2695/18333023/2695_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        2
      ]
    ],
    "date-time": "2024-02-02T09:01:38Z",
    "timestamp": 1706864498000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/jap/article/35/9/2695/151917/Redistribution-of-Acceptor-and-Donor-Impurities"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1964,
        9,
        1
      ]
    ]
  },
  "references-count": 17,
  "journal-issue": {
    "issue": "9",
    "published-print": {
      "date-parts": [
        [
          1964,
          9,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.1713825",
  "relation": {},
  "ISSN": [
    "0021-8979",
    "1089-7550"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1964,
        9
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1964,
        9,
        1
      ]
    ]
  }
}