Crossref journal-article
AIP Publishing
Journal of Applied Physics (317)
Abstract

An expression is derived for the differential capacitance of a metal contact to a semiconductor in which the bulk free carrier density is degenerate or near degenerate. A significant correction to the nondegenerate theory may be required for accurate measurement of the barrier height.

Bibliography

Goodman, A. M., & Perkins, D. M. (1964). Metal-Semiconductor Barrier-Height Measurement by the Differential Capacitance Method—Degenerate One-Carrier System. Journal of Applied Physics, 35(11), 3351–3353.

Authors 2
  1. Alvin M. Goodman (first)
  2. David M. Perkins (additional)
References 14 Referenced 20
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Dates
Type When
Created 20 years, 4 months ago (April 22, 2005, 12:38 p.m.)
Deposited 1 year, 6 months ago (Feb. 2, 2024, 4:15 a.m.)
Indexed 1 year, 6 months ago (Feb. 5, 2024, 8:04 a.m.)
Issued 60 years, 9 months ago (Nov. 1, 1964)
Published 60 years, 9 months ago (Nov. 1, 1964)
Published Print 60 years, 9 months ago (Nov. 1, 1964)
Funders 0

None

@article{Goodman_1964, title={Metal-Semiconductor Barrier-Height Measurement by the Differential Capacitance Method—Degenerate One-Carrier System}, volume={35}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1713221}, DOI={10.1063/1.1713221}, number={11}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Goodman, Alvin M. and Perkins, David M.}, year={1964}, month=nov, pages={3351–3353} }