DOI: 10.1063/1.1709280. Electrical Properties of Cr-SiO Cermet Films

Electrical Properties of Cr-SiO Cermet Films

10.1063/1.1709280

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

The Hall coefficient, temperature coefficient of resistance, and conductivity of Cr-SiO cermet films were measured as a function of film composition. The behavior of the Hall coefficient indicates this material should be treated as a two-carrier system. A model is proposed which may account for this behavior and for the dependence of the temperature coefficient of resistance on small concentrations of SiO.

Bibliography

Lood, D. E. (1967). Electrical Properties of Cr-SiO Cermet Films. Journal of Applied Physics, 38(13), 5087â5089.

Authors 1

D. E. Lood (first)

References 7 Referenced 16

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10.1063/1.1709824 / J. Appl. Phys. (1967)
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Dates

Type	When
Created	20 years, 7 months ago (Jan. 15, 2005, 10:15 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 5:54 a.m.)
Indexed	1 year, 6 months ago (Feb. 2, 2024, 6:10 a.m.)
Issued	57 years, 8 months ago (Dec. 1, 1967)
Published	57 years, 8 months ago (Dec. 1, 1967)
Published Print	57 years, 8 months ago (Dec. 1, 1967)

Funders 0

None

BibTeX

@article{Lood_1967, title={Electrical Properties of Cr-SiO Cermet Films}, volume={38}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1709280}, DOI={10.1063/1.1709280}, number={13}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Lood, D. E.}, year={1967}, month=dec, pages={5087–5089} }

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